DU2820S 데이터 시트보기 (PDF) - M/A-COM Technology Solutions, Inc.
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DU2820S Datasheet PDF : 4 Pages
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DU2820S
RF Power MOSFET Transistor
200 W, 2 - 175 MHz, 28 V
Features
N-Channel enhancement mode device
DMOS structure
Lower capacitances for broadband operation
High saturated output power
Lower noise figure than bipolar devices
RoHS Compliant
ABSOLUTE MAXIMUM RATINGS AT 25° C
Parameter
Symbol
Rating
Drain-Source Voltage
Gate-Source Voltage
Drain-Source Current
Power Dissipation
Junction Temperature
Storage Temperature
Thermal Resistance
VDS
VGS
IDS
PD
TJ
TSTG
θJC
65
20
24
62.5
200
-55 to +150
2.8
Units
V
V
A
W
°C
°C
°C/W
TYPICAL DEVICE IMPEDANCE
F (MHz)
30
ZIN (Ω)
17.5 - j13.0
ZLOAD (Ω)
16.0 - j2.5
50
15.0 - j15.5
15.0 - j4.0
100
8.0 - j14.0
12.0 - j6.0
200
5.5 - j8.0
9.25 - j6.0
VDD = 28V, IDQ = 100mA, POUT = 20 W
ZIN is the series equivalent input impedance of the device
from gate to source.
ZLOAD is the optimum series equivalent load impedance
as measured from drain to ground.
Package Outline
Rev. V1
LETTER
DIM
A
B
C
D
E
F
G
H
J
K
L
MILLIMETERS
MIN
MAX
24.64
24.89
18.29
18.54
20.07
20.83
9.47
9.73
6.22
6.48
5.64
5.79
2.92
3.30
2.29
2.67
4.04
4.55
6.58
7.39
.10
.15
INCHES
MIN
MAX
.970
.980
.720
.730
.790
.820
.373
.383
.245
.255
.222
.228
.115
.130
.090
.105
.159
.179
.259
.291
.004
.006
ELECTRICAL CHARACTERISTICS AT 25°C
Parameter
Symbol Min Max
Drain-Source Breakdown Voltage
BVDSS
65
-
Drain-Source Leakage Current
IDSS
-
1.0
Gate-Source Leakage Current
IGSS
-
1.0
Gate Threshold Voltage
VGS(TH)
2.0
6.0
Forward Transconductance
GM
500
-
Input Capacitance
CISS
-
45
Output Capacitance
Reverse Capacitance
COSS
CRSS
-
40
-
8
Power Gain
GP
13
-
Drain Efficiency
ŋD
60
-
Load Mismatch Tolerance
VSWR-T - 30:1
1
Units
V
mA
µA
V
S
pF
pF
pF
dB
%
-
Test Conditions
VGS = 0.0 V , IDS = 5.0 mA
VGS = 28.0 V , VGS = 0.0 V
VGS = 20.0 V , VDS = 0.0 V
VDS = 10.0 V , IDS = 100.0 mA
VDS = 10.0 V , IDS = 100.0 mA , Δ VGS = 1.0V, 80 μs Pulse
VDS = 28.0 V , F = 1.0 MHz
VDS = 28.0 V , F = 1.0 MHz
VDS = 28.0 V , F = 1.0 MHz
VDD = 28.0 V, IDQ = 100 mA, POUT = 20 W F =175 MHz
VDD = 28.0 V, IDQ = 100 mA, POUT = 20 W F =175 MHz
VDD = 28.0 V, IDQ = 100 mA, POUT = 20 W F =175 MHz
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