EBD11UD8ABFA 데이터 시트보기 (PDF) - Elpida Memory, Inc
부품명
상세내역
제조사
EBD11UD8ABFA Datasheet PDF : 18 Pages
| |||
EBD11UD8ABFA
Pin Capacitance (TA = 25°C, VDD, VDDQ = 2.5V ± 0.2V)
Parameter
Input capacitance
Input capacitance
Data and DQS input/output
capacitance
Symbol
CI1
CI2
CO
Pins
max.
Address, /RAS, /CAS, /WE,
/CS, CKE
TBD
CK, /CK
TBD
DQ, DQS
TBD
Unit
Notes
pF
pF
pF
AC Characteristics (TA = 0 to +70°C, VDD, VDDQ = 2.5V ± 0.2V, VSS = 0V)
(DDR SDRAM Device Specification)
Parameter
Clock cycle time
(CL = 2)
(CL = 2.5)
CK high-level width
CK low-level width
CK half period
DQ output access time from
CK, /CK
DQS output access time from CK, /CK
DQS to DQ skew
DQ/DQS output hold time from DQS
Data hold skew factor
Data-out high-impedance time from CK, /CK
Data-out low-impedance time from CK, /CK
Read preamble
Read postamble
DQ and DM input setup time
DQ and DM input hold time
DQ and DM input pulse width
Write preamble setup time
Write preamble
Write postamble
Write command to first DQS latching transition
DQS falling edge to CK setup time
DQS falling edge hold time from CK
DQS input high pulse width
DQS input low pulse width
Address and control input setup time
Address and control input hold time
Address and control input pulse width
Mode register set command cycle time
Active to Precharge command period
Active to Active/Auto refresh command period
Symbol
tCK
tCK
tCH
tCL
tHP
tAC
tDQSCK
tDQSQ
tQH
tQHS
tHZ
tLZ
tRPRE
tRPST
tDS
tDH
tDIPW
tWPRES
tWPRE
tWPST
tDQSS
tDSS
tDSH
tDQSH
tDQSL
tIS
tIH
tIPW
tMRD
tRAS
tRC
-7A
min.
7.5
7.5
0.45
0.45
min
(tCH, tCL)
–0.75
–0.75
—
tHP – tQHS
—
–0.75
–0.75
0.9
0.4
0.5
0.5
1.75
0
0.25
0.4
0.75
0.2
0.2
0.35
0.35
0.9
0.9
2.2
2
45
67.5
max
Unit
12
ns
12
ns
0.55
tCK
0.55
tCK
—
tCK
0.75
ns
0.75
ns
0.6
ns
—
ns
0.75
ns
0.75
ns
0.75
ns
1.1
tCK
0.6
tCK
—
ns
—
ns
—
ns
—
ns
—
tCK
0.6
tCK
1.25
tCK
—
tCK
—
tCK
—
tCK
—
tCK
—
ns
—
ns
—
ns
—
tCK
120000
ns
—
ns
Notes
10
2, 11
2, 11
3
5, 11
6, 11
8
8
7
9
8
8
7
Preliminary Data Sheet E0281E10 (Ver. 1.0)
11
Share Link: 