RMPA0953-103 데이터 시트보기 (PDF) - Raytheon Company

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RMPA0953-103

3V Cellular AMPS and CDMA Power Amplifier Module with Digital Bias Control

Raytheon Company 

Description

RMPA0953-103

3V Cellular AMPS and CDMA Power Amplifier

Module with Digital Bias Control ADVANCED INFORMATION

The RMPA0953-103 power amplifier module (PAM) for AMPS, CDMA and CDMA2000-1X Cellular applications. The

PAM is internally matched to 50 ohms to minimize the use of external components. Advanced DC power

management reduces current consumption during peak phone usage at backed-off RF power levels. Advanced

Digital Bias control reduces the number of interface components to baseband. High power-added efficiency and

excellent linearity are achieved using Raytheon’s InGaP Heterojunction Bipolar Transistor (HBT) process.

Features

‹ Single positive-supply operation and power-down mode

‹ Low Backed Off current consumption: 65 mA @ 12 dBm output power

‹ 34% power-added efficiency at +27.4 dBm CDMA average output power

‹ 48% AMPS power-added efficiency at +30.7 dBm AMPS output power

‹ Compact LCC package: 6.0 x 8.0 x 1.5 mm3

‹ 50 ohm matched and DC blocked input/output

‹ Advanced Digital Bias Control

Absolute

Maximum

Ratings1

Parameter

Supply Voltages

Bias Voltage 1 and 2

Chip Enable

RF Input Power

Case Operating Temperature

Storage Temperature

Symbol

Vcc1, Vcc2, and Vbias

Vba1, Vba2

Venbl

Pin

Tc

Tstg

Value

5

2.5

3.0

+5

-30 to+85

-55 to+150

Units

V

V

V

dBm

°C

°C

Electrical

Characteristics2

Parameter

Operating Frequency

Gain

(Po=12 dBm)

(Po=27.4 dBm)

CDMA Output Power

CDMA PAE

(Po=27.4 dBm)

ACPR13

ACPR2

Input VSWR (50Ω)

Min Typ Max Unit

824

849 MHz

22

28 dB

27 30 34 dB

27.4

dBm

34

%

-47 -52

dBc

-56

dBc

2.0:1 2.5:1

Parameter

Min Typ Max Unit

Itotal @ 27.4 dBm Pout

425

mA

Itotal @ 12 dBm Pout

65

mA

Stability (All Spurious)4

-65 dBc

AMPS Power Output

30.7

dBm

AMPS PAE

48

%

Harmonics Po ≤ 27.4 dBm

2fo, 3fo, 4fo

-30 dBc

Shutdown Current4

<1

uA

Vcc

3.0 3.4 4.6 V

www.raytheonrf.com

Notes:

1. No permanent damage with only one parameter set at extreme limit. Other parameters set to typical values.

2. All parameters met at Tc =+25°C, Vcc =+3.4V, Vref=+2.7V, f=836.5 MHz and load VSWR ≤ 1.2:1.

3. Po ≤ 27.4 dBm at Vcc=3.4V; CDMA Waveform measured using the ratio of average power within a

1.23 MHz channel to average power within a 30 kHz bandwidth at + 885 KHz offset.

4. No applied RF signal. Vcc=+3.4V nominal, Vref=+0.2V maximum.

Characteristic performance data and specifications are subject to change without notice.

Revised November 14, 2001

Page 1

Raytheon RF Components

362 Lowell Street

Andover, MA 01810

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