RMPA0951-102 데이터 시트보기 (PDF) - Raytheon Company
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RMPA0951-102 Datasheet PDF : 8 Pages
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RMPA0951-102
3V Cellular CDMA Power Amplifier Module
ADVANCED INFORMATION
Evaluation Board
Layout, Schematic,
and Instructions
With device marking oriented right side up, RF IN is on the left and RF OUT is on the right.
VCC= +3.5V nominal. Vref=+ 3.0V nominal to obtain Iccq= 70 mA. Operation at lower or higher quiescent
currents can be achieved by decreasing or increasing Vref voltage relative to +3.0V.
First ground the PCB (GND terminal) and apply +3.5V to the collector supply terminals (VCC1, VCC2). Next
apply +3.0V to the reference supply (VREF terminal). Quiescent collector current with no RF applied will be
about 80 mA. Reference supply current with or without RF applied will be about 15 mA. When turning amplifier
off, reverse power supply sequence.
Apply -20 dBm RF input power at Cellular frequency (824-849 MHz). After making any initial small signal
measurements at this drive level, input power may be increased up to a maximum of +7 dBm for large signal,
analog (AMPS) or digital CDMA measurements. Do not exceed +7 dBm input power.
RF IN
VCC
VREF
PCB Specifications:
Material: Rogers RO4003
Dimensions: 2.0”x1.5”x0.032”
GND
Metallization: 1/2 OZ Copper Cladding
RF OUT
C1 *
3.3 µF
SMA1
RF IN
Vcc1
50 ohm TRL
Vref
1
6
N/C
2
Raytheon
5 50 ohm TRL
RMPA0951-102
3 PPYYWWZZZ 4
Vcc2*
*Minimum VCC bypass capacitance recommended
for best RF performance.
7 (package base)
C2 *
3.3 µF
SMA2
RF OUT
www.raytheon.com/micro
Characteristic performance data and specifications are subject to change without notice.
Revised May 10, 2001
Page 3
Raytheon RF Components
362 Lowell Street
Andover, MA 01810
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