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RMPA1951-102

3V PCS CDMA Power Amplifier Module

Raytheon Company 

RF Components

RMPA1951-102

3V PCS CDMA Power Amplifier Module

Description

PRODUCT INFORMATION

The RMPA1951-102 is a small-outline, power amplifier module (PAM) for CDMA Personal

Communication System (PCS) and Wireless Local Loop (WLL) applications. Advanced DC power

management provides an effective means to reduce current consumption during peak phone

usage at backed-off RF power levels. Analog or digital bias control enables the handset designer to

optimize gain, linearity and power-added efficiency over a wide range of output powers, depending on

the power-density profile of the wireless network. High power-added efficiency and excellent linearity

are achieved using Raytheon RF Components’ Heterojunction Bipolar Transistor (HBT) process.

Features

! Advanced DC power-management extends average phone-

battery life!

! Single positive-supply operation and power-down mode

! 35% power-added efficiency at +29 dBm CDMA average output

power

! Compact LCC package: 6.0 x 6.0 x 1.5 mm

! 50 ohm matched and DC blocked input/output

Absolute

Ratings1

Parameter

Supply Voltage

Reference Voltage

RF Input Power2

Load VSWR

Case Operating Temperature

Storage Temperature

Symbol

Vcc

Vref

Pin

VSW R

Tc

Tstg

Value

6

1.5 to 4.0

+7

-40 to +110

-55 to +150

Units

V

V

dBm

°C

°C

Electrical Parameter

Characteristics3 Operating Frequency

Min Typ Max Unit

1850

1910 MHz

Parameter

Min Typ Max Unit

Stability (All spurious)5

-70 dBc

Gain

Harmonics (Po ≤ 29 dBm)

(Po=0 dBm)

20

24

dB

2fo, 3fo, 4fo

-30 dBc

(Po=28 dBm)

25

27

dB

Quiescent Current

Linear Output Power

29

dBm

(Vref=2.7V)

80 100 mA

Power-Added Efficiency

(Po=16 dBm)

5

6.5

(Vref=2.0V)

%

(Vref=1.7V)

50

mA

35

mA

(Po=28 dBm)

28

32

%

Power Shutdown Current6

2

10 uA

(Po=29 dBm)

31

35

%

Vcc

3.0 3.5 4.5 V

ACPR (Offset ≥ 1.25 MHz)4

-49 -46 dBc

Vref

1.7 2.7 3.2 V

Noise Figure

5 6 dB

Iref

13

mA

Noise Power (Po ≤ 29 dBm)

-135 dBm/Hz Case Operating

Input VSWR (50Ω)

2.0:1 2.5:1

Temperature

-30

+85 °C

Output VSWR (50Ω)

3.5:1

Notes:

1. No permanent damage with only one parameter set at extreme limit. Other parameters set to typical values.

2. Typical RF input power for CDMA Pout = +28 dBm.

3. All parameters met at Tc =+25°C, Vcc =+3.5V, Vref=+2.7V, f=1880 MHz and load VSWR ≤ 1.2:1.

4. Po ≤ 28 dBm at Vcc=3.5V; CDMA W aveform measured using the ratio of average power within a

1.23 MHz channel to average power within a 30 kHz bandwidth at + 1.25 MHz offset.

5. Load VSWR ≤ 6:1, all phase angles.

6. No applied RF signal. Vcc=+3.5V nominal, Vref=+0.2V maximum.

www.raytheonrf.com

Specifications are based on most current or latest revision.

Revised February 6, 2003

Page 1

Raytheon RF Components

362 Lowell Street

Andover, MA 01810

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