EGP20H 데이터 시트보기 (PDF) - Fairchild Semiconductor
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EGP20H Datasheet PDF : 4 Pages
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EGP20A - EGP20K
2.0 Ampere Glass Passivated High Efficiency Rectifiers
Features
• Glass passivated cavity-free junction
• High surge current capability
• Low leakage current
• Superfast recovery time for high efficiency
• Low forward voltage, high current capability
July 2007
DO-15 Glass case
COLOR BAND DENOTES CATHODE
Absolute Maximum Ratings* Ta = 25°C unless otherwise noted
Symbol
Parameter
IO
Average Rectified Current
.375 " lead length @ TL = 55°C
Value
2.0
if(surge)
Peak Forward Surge Current
8.3 ms single half-sine-wave
75
Superimposed on rated load (JEDEC method)
PD
Total Device Dissipation
3.13
Derate above 25°C
25
RθJA
Thermal Resistance, Junction to Ambient
40
RθJL
Thermal Resistance, Junction to Lead
15
TJ, TSTG Junction and Storage Temperature Range
-65 ~ 150
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Units
A
A
W
mW°C
°C/W
°C/W
°C
Electrical Characteristics* Ta = 25°C unless otherwise noted
Device
Parameter
20A 20B 20C 20D 20F 20G 20J 20K
Peak Repetitive Reverse Voltage
50
100
150
200
300
400
600
800
Maximum RMS Voltage
35
70
105
140
210
280
420
560
DC Reverse Voltage (Rated VR)
50
100
150
200
300
400
600
800
Maximum Reverse Current
@ rated VR TA = 25°C
5.0
TA = 125°C
100
Maximum Reverse Recovery Time
IF = 0.5 A, IR = 1.0 A, Irr = 0.25 A
50
75
Maximum Forward Voltage @ 2.0 A
0.95
1.25
1.7
Typical Junction Capacitance
VR = 4.0 V, f = 1.0 MHz
70
45
* Pulse Test: Pulse Width≤300μs, Duty Cycle≤2%
Units
V
V
V
μA
μA
nS
V
pF
©2007 Fairchild Semiconductor Corporation
1
EGP20A - EGP20K Rev. A
www.fairchildsemi.com
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