EL7532 데이터 시트보기 (PDF) - Intersil
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EL7532 Datasheet PDF : 8 Pages
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EL7532
Absolute Maximum Ratings (TA = 25°C)
VIN, VDD, POR to SGND . . . . . . . . . . . . . . . . . . . . . . -0.3V to +6.5V
LX to PGND . . . . . . . . . . . . . . . . . . . . . . . . . . -0.3V to (VIN + +0.3V)
RSI, EN, VO, FB to SGND . . . . . . . . . . . . . . . -0.3V to (VIN + +0.3V)
PGND to SGND . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.3V to +0.3V
Peak Output Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.4A
ESD Classification
Human Body Model (Per JESD22-A114-B) . . . . . . . . . . . . Class 2
Thermal Information
Thermal Resistance (Typical)
θJA (°C/W)
MSOP10 Package (Note 1) . . . . . . . . . . . . . . . . . . .
115
Operating Ambient Temperature . . . . . . . . . . . . . . . .-40°C to +85°C
Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . .-65°C to +150°C
Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +125°C
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. θJA is measured with the component mounted on a high effective thermal conductivity test board in free air. See Tech Brief TB379 for details.
IMPORTANT NOTE: All parameters having Min/Max specifications are guaranteed. Typ values are for information purposes only. Unless otherwise noted, all tests are
at the specified temperature and are pulsed tests, therefore: TJ = TC = TA
Electrical Specifications VDD = VIN = VEN = 3.3V, C1 = C2 = 10µF, L = 1.8µH, VO = 1.8V, unless otherwise specified.
PARAMETER
DESCRIPTION
CONDITIONS
MIN TYP MAX
UNIT
DC CHARACTERISTICS
VFB
Feedback Input Voltage
790
800
810
mV
IFB
Feedback Input Current
250
nA
VIN, VDD
Input Voltage
2.5
5.5
V
VIN,OFF
Minimum Voltage for Shutdown
VIN falling
2
2.2
V
VIN,ON
Maximum Voltage for Startup
VIN rising
2.2
2.4
V
IDD
Supply Current
PWM, VIN = VDD = 5V
400
500
µA
EN = 0, VIN = VDD = 5V
0.1
1
µA
RDS(ON)-PMOS PMOS FET Resistance
VDD = 5V, wafer test only
52
80
mΩ
RDS(ON)-NMOS NMOS FET Resistance
VDD = 5V, wafer test only
35
65
mΩ
ILMAX
Current Limit (GBD)
3
A
TOT,OFF
Over-temperature Threshold (GBD)
T rising
145
°C
TOT,ON
Over-temperature Hysteresis (GBD)
T falling
130
°C
IEN, IRSI
EN, RSI Current
VEN, VRSI = 0V and 3.3V
-1
1
V
VEN1, VRSI1 EN, RSI Rising Threshold
VDD = 3.3V
2.4
V
VEN2, VRSI2 EN, RSI Falling Threshold
VDD = 3.3V
0.8
V
VPOR
Minimum VFB for POR, WRT Targeted
VFB Value
VFB rising
VFB falling
95
%
86
%
VOLPOR
POR Voltage Drop
ISINK = 5mA
35
70
mV
VLINEREG
Line Regulation (GBD)
VIN = 2.5V to 6V, IOUT = 2A, VOUT = 1.8V
0.1
%/V
VLOADREG
Load Regulation (GBD)
VIN = 3.3V, VOUT = 1.8V, IOUT = 0 to 2A
0.5
%
AC CHARACTERISTICS
FPWM
PWM Switching Frequency
tRSI
Minimum RSI Pulse Width (GBD)
tSS
Soft-start Time (GBD)
tPOR
Power On Reset Delay Time (GBD)
GBD = Guaranteed By Design
Guaranteed by design
1.35
1.5
1.65 MHz
25
50
ns
650
µs
80
100
120
ms
2
FN7435.7
December 8, 2006
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