EMIF04-10006F1 데이터 시트보기 (PDF) - STMicroelectronics
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EMIF04-10006F1 Datasheet PDF : 7 Pages
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EMIF04-10006F2
Figure 2: Basic Cell Configuration
Input 1
100Ω
30pF 30pF
Output 1
Input 4
Input 2
100Ω
Output 2
D1
30pF 30pF
Input 3
100Ω
Output 3
D3
30pF 30pF
100Ω
30pF 30pF
30pF 30pF
30pF 30pF
Output 4
D2
D4
Table 2: Absolute Ratings (limiting values)
Symbol
Parameter and test conditions
PR DC power per resistance
PT Total DC power per package
Tj
Maximum junction temperature
Top Operating temperature range
Tstg Storage temperature range
Value
Unit
0.1
W
0.6
W
125
°C
- 40 to + 85
°C
125
°C
Table 3: Electrical Characteristics (Tamb = 25 °C)
Symbol
Parameter
I
VBR Breakdown voltage
IF
IRM Leakage current @ VRM
VRM Stand-off voltage
VCL Clamping voltage
Rd Dynamic impedance
IPP Peak pulse current
VF
VCL VBR VRM
IRM
V
IR
RI/O Series resistance between Input
and output
IPP
Cline Capacitance per line
Symbol
VBR
IRM
RI/O
Cline
Test conditions
IR = 1 mA
VRM = 3.3 V per line
I = 10 mA
VR = 2.5 V, F = 1 MHz, 30 mV (on filter cells)
Min. Typ. Max. Unit
5.5
7
9
V
500
nA
80
100
120
Ω
50
60
70
pF
2/7
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