EMZ2(2015) 데이터 시트보기 (PDF) - ROHM Semiconductor
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EMZ2 Datasheet PDF : 12 Pages
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EMZ2 / UMZ2N / IMZ2A
Datasheet
lAbsolute maximum ratings (Ta = 25°C)
Parameter
Symbol Tr1(PNP) Tr2(NPN) Unit
Collector-base voltage
VCBO
-60
60
V
Collector-emitter voltage
VCEO
-50
50
V
Emitter-base voltage
VEBO
-6
7
V
Collector current
IC
-150
150
mA
Power dissipation
Junction temperature
Range of storage temperature
EMZ2/ UMZ2N
IMZ2A
PD*1 *2
PD*1 *3
Tj
Tstg
for 150
300
150
-55 to +150
mW/Total
mW/Total
℃
℃
lElectrical characteristics (Ta = 25°C) <For Tr1(PNP)>
Parameter
Symbol
Conditions
d Collector-base breakdown voltage
e Collector-emitter breakdown
voltage
d Emitter-base breakdown voltage
n s Collector cut-off current
Emitter cut-off current
e n Collector-emitter saturation voltage
m ig DC current gain
Transition frequency
m es Output capacitance
BVCBO
BVCEO
BVEBO
ICBO
IEBO
VCE(sat)
hFE
fT
Cob
IC = -50μA
IC = -1mA
IE = -50μA
VCB = -60V
VEB = -6V
IC = -50mA, IB = -5mA
VCE = -6V, IC = -1mA
VCE = -12V, IE = 2mA,
f = 100MHz
VCB = -12V, IE = 2mA,
f = 100MHz
o D lElectrical characteristics (Ta = 25°C) <For Tr2(NPN)>
c Parameter
Symbol
Conditions
e w Collector-base breakdown voltage
Collector-emitter breakdown
R e voltage
Emitter-base breakdown voltage
t N Collector cut-off current
o Emitter cut-off current
NCollector-emitter saturation voltage
BVCBO
BVCEO
BVEBO
ICBO
IEBO
VCE(sat)
IC = 50μA
IC = 1mA
IE = 50μA
VCB = 60V
VEB = 7V
IC = 50mA, IB = 5mA
Values
Min. Typ.
-60 -
-50 -
-6
-
-
-
-
-
-
-
120 -
- 140
- 4.0
Values
Min. Typ.
60
-
50
-
7
-
-
-
-
-
-
-
Max.
-
-
-
-100
-100
-500
560
-
5.0
Max.
-
-
-
100
100
400
Unit
V
V
V
nA
nA
mV
-
MHz
pF
Unit
V
V
V
nA
nA
V
DC current gain
hFE VCE = 6V, IC = 1mA
120 - 560 -
Transition frequency
fT
VCE = 12V, IE = -2mA,
f = 100MHz
- 180 - MHz
Output capacitance
Cob
VCB = 12V, IE = 0A,
f = 1MHz
- 2.0 3.5 pF
*1 Each terminal mounted on a reference land.
*2 120mW per element must not be exceeded.
*3 200mW per element must not be exceeded.
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20150825 - Rev.003
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