EMZ2 데이터 시트보기 (PDF) - ROHM Semiconductor
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EMZ2 Datasheet PDF : 3 Pages
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Transistors
EMZ2 / UMZ2N / FMY4A / IMZ2A
!Electrical characteristics (Ta=25°C)
Tr1
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current transfer ratio
Transition frequency
Output capacitance
∗ Transition frequency of the device.
Symbol
Min. Typ. Max. Unit
Conditions
BVCBO
BVCEO
−60
−
−
−50
−
−
V IC = −50µA
V IC = −1mA
BVEBO
−6
−
−
V IE = −50µA
ICBO
−
−
−0.1
µA VCB = −60V
IEBO
−
−
−0.1
µA VEB = −6V
VCE(sat)
−
−
−0.5
V IC/IB = −50mA/−5mA
hFE
fT
Cob
120
−
560
−
VCE = −6V , IC = −1mA
−
140
−
MHz VCE = −12V , IE = 2mA , f = 100MHz
∗
−
4
5
pF VCB = −12V , IE = 0A , f = 1MHz
Tr2
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current transfer ratio
Transition frequency
Output capacitance
∗ Transition frequency of the device.
Symbol
Min. Typ. Max. Unit
Conditions
BVCBO
BVCEO
60
−
−
V IC = 50µA
50
−
−
V IC = 1mA
BVEBO
7
−
−
V IE = 50µA
ICBO
−
−
0.1
µA VCB = 60V
IEBO
−
−
0.1
µA VEB = 7V
VCE(sat)
−
−
0.4
V IC/IB = 50mA/5mA
hFE
fT
Cob
120
−
560
−
VCE = 6V , IC = 1mA
−
180
−
MHz VCE = 12V , IE = −2mA , f = 100MHz
∗
−
2
3.5
pF VCB = 12V , IE = 0A , f = 1MHz
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