ESDA6V1B1 데이터 시트보기 (PDF) - STMicroelectronics
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ESDA6V1B1 Datasheet PDF : 6 Pages
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ESDA6V1B1
Fig. 1 : Peak power dissipation versus initial
junction temperature.
Ppp[Tj initial]/Ppp[Tj initial=25°C]
1.1
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
0
Tj initial(°C)
25 50 75 100 125 150 175
Fig. 2 : Peak pulse power versus exponential
pulse duration (Tj initial = 25 °C).
Ppp(W)
2000
1000
100
10
1
tp(µs)
10
100
Fig. 3 : Clamping voltage versus peak pulse
current (Tj initial = 25 °C).
Rectangular waveform tp = 2.5 µs.
Fig. 4 : Capacitance versus reverse applied
voltage (typical values).
Ipp(A)
50.0
tp=2.5µs
10.0
1.0
0.1
0
Vcl(V)
5 10 15 20 25 30 35 40 45 50
C(pF)
50
45
40
35
30
25
1
F=1MHz
Vosc=30mV
VR(V)
2
3
4
56
Fig. 5 : Relative variation of leakage current versus
junction temperature (typical values).
IR[Tj] / IR[Tj=25°C]
2.2
2.0
1.8
1.6
1.4
1.2
Tj(°C)
1.0
25
50
75
100
125
150
4/6
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