ESDALC6V1-5P6 데이터 시트보기 (PDF) - STMicroelectronics
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ESDALC6V1-5P6 Datasheet PDF : 8 Pages
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Characteristics
1
Characteristics
ESDALC6V1-5P6
Table 1.
Symbol
Absolute ratings (Tamb = 25 °C)
Parameter
Value Unit
VPP(1) Peak pulse voltage
IEC 61000-4-2 contact discharge
IEC 61000-4-2 air discharge
PPP (1) Peak pulse power dissipation (8/20 µs)
Tj initial = Tamb
IPP Peak pulse current (8/20 µs)
Tj Junction temperature
Tstg Storage temperature range
TL Maximum lead temperature for soldering during 10 s
TOP Operating temperature range
1. For a surge greater than the maximum values, the diode will fail in short-circuit.
±8
kV
± 15
30
W
2.5
A
125
°C
-55 to +150 °C
260
°C
- 40 + 125 °C
Table 2. Electrical characteristics (Tamb = 25 °C)
Symbol
Parameter
VRM
Stand-off voltage
VBR
Breakdown voltage
VCL
Clamping voltage
IRM
Leakage current
VCL VBR VRM
IPP
Peak pulse current
αT
Voltage temperature coefficient
I
IF
VF
IRM
VF
Forward voltage drop
C
Capacitance
Slope: 1/Rd
IPP
Rd
Dynamic resistance
Parameter
Test condition
Min Typ Max
V
Unit
VRRM Reverse stand-off voltage
5
V
VBR
IR = 1 mA
6.1
7.2
V
IRM
VRM = 3 V
70
nA
VCL
Non repetitive peak pulse voltage
(8/20 µs)
IPP = 1 A
IPP = 2.5 A
10
V
14
VF
IF = 10 mA
1
V
Rd
αT(1)
IR = 1 mA
2
3
Ω
5
10-4/°C
C
VR = 0 V DC, F = 1 MHz,
Vosc = 30 mV rms
12 15
pF
1. ΔVBR = αT x (Tamb - 25 °C) x VBR (25 °C)
2/8
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