ESM2030DV 데이터 시트보기 (PDF) - STMicroelectronics

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ESM2030DV

NPN DARLINGTON POWER MODULE

STMicroelectronics 

ESM2030DV

THERMAL DATA

Rthj-case

Rthj-case

Rthc-h

Thermal Resistance Junction-case (transistor)

Thermal Resistance Junction-case (diode)

Thermal Resistance Case-heatsink With Conductive

Grease Applied

Max

Max

Max

0.83

1.2

0.05

oC/W

oC/W

oC/W

ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)

Symbol

Parameter

Test Conditions

ICER #

ICEV #

Collector Cut-off

Current (RBE = 5 Ω)

Collector Cut-off

Current (VBE = -5V)

VCE = VCEV

VCE = VCEV

VCE = VCEV

VCE = VCEV

Tj = 100 oC

Tj = 100 oC

IEBO # Emitter Cut-off Current

(IC = 0)

VCEO(SUS)* Collector-Emitter

Sustaining Voltage

hFE∗ DC Current Gain

VEB = 5 V

IC = 0.2 A L = 25 mH

Vclamp = 300 V

IC = 56 A VCE = 5 V

VCE(sat)∗ Collector-Emitter

Saturation Voltage

IC = 40 A

IC = 40 A

IC = 56 A

IC = 56 A

IB = 0.4 A

IB = 0.4 A

IB = 1.6 A

IB = 1.6 A

Tj = 100 oC

Tj = 100 oC

VBE(sat)∗ Base-Emitter

Saturation Voltage

IC = 56 A IB = 1.6 A

IC = 56 A IB = 1.6 A Tj = 100 oC

diC/dt

VCE(3

µs)••

Rate of Rise of

On-state Collector

Collector-Emitter

Dynamic Voltage

VCC = 300 V RC = 0 tp = 3 µs

IB1 = 0.6 A Tj = 100 oC

VCC = 300 V RC = 7.5 Ω

IB1 = 0.6 A

Tj = 100 oC

Min. Typ.

300

300

1.25

1.4

1.5

1.8

2.4

2.5

220 260

3

Max.

1.5

16

1

11

1

1.8

2.2

3

6

Unit

mA

mA

mA

mA

mA

V

V

V

V

V

V

V

A/µs

V

VCE(5 Collector-Emitter

µs)•• Dynamic Voltage

VCC = 300 V RC = 7.5 Ω

IB1 = 0.6 A

Tj = 100 oC

2.2

4

V

ts

Storage Time

tf

Fall Time

tc

Cross-over Time

IC = 40 A

VBB = -5 V

Vclamp = 300 V

L = 0.06 mH

VCC = 50 V

RBB = 0.6 Ω

IB1 = 0.4 A

Tj = 100 oC

VCEW

VF∗

Maximum Collector

Emitter Voltage

Without Snubber

Diode Forward Voltage

ICWoff = 67 A

IB1 = 1.6 A

VBB = -5 V

VCC = 50 V

L = 0.037 mH RBB = 0.6 Ω

Tj = 125 oC

IF = 56 A Tj = 100 oC

IRM Reverse Recovery

VCC = 200 V

IF = 56 A

Current

diF/dt = -220 A/µs L < 0.05 µH

Tj = 100 oC

∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %

# See test circuit in databook introduction

To evaluate the conduction losses of the diode use the following equations:

VF = 1.1 + 0.0045 IF P = 1.1 IF(AV) + 0.0045 I2F(RMS)

2

3

µs

0.35 0.6

µs

0.8

1.2

µs

300

V

1.15 1.6

V

12

17

A

2/8

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