MT4LC4M16R6TG-XS 데이터 시트보기 (PDF) - Micron Technology

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MT4LC4M16R6TG-XS

4 MEG x 16 EDO DRAM

Micron Technology 

ABSOLUTE MAXIMUM RATINGS*

Voltage on VCC Relative to VSS ................ -1V to +4.6V

Voltage on NC, Inputs or I/O Pins

Relative to VSS ....................................... -1V to +4.6V

Operating Temperature, TA (ambient)

Commercial ......................................... 0°C to +70°C

Extended (IT) ................................. -40°C to +85°C**

Storage Temperature (plastic) ............ -55°C to +150°C

Power Dissipation ................................................... 1W

4 MEG x 16

EDO DRAM

*Stresses greater than those listed under “Absolute

Maximum Ratings” may cause permanent damage to

the device. This is a stress rating only, and functional

operation of the device at these or any other conditions

above those indicated in the operational sections of

this specification is not implied. Exposure to absolute

maximum rating conditions for extended periods may

affect reliability.

**Available only on MT4LC4M16R6 standard refresh

device.

DC ELECTRICAL CHARACTERISTICS AND OPERATING CONDITIONS

(Note: 1) (VCC = +3.3V ±0.3V)

PARAMETER/CONDITION

SUPPLY VOLTAGE

INPUT HIGH VOLTAGE:

Valid Logic 1; All inputs, I/Os and any NC

INPUT LOW VOLTAGE:

Valid Logic 0; All inputs, I/Os and any NC

INPUT LEAKAGE CURRENT:

Any input at VIN (0V £ VIN £ VCC + 0.3V);

All other pins not under test = 0V

OUTPUT HIGH VOLTAGE:

IOUT = -2mA

OUTPUT LOW VOLTAGE:

IOUT = 2mA

OUTPUT LEAKAGE CURRENT:

Any output at VOUT (0V £ VOUT £ VCC + 0.3V);

DQ is disabled and in High-Z state

SYMBOL MIN

VCC

3

MAX UNITS NOTES

3.6

V

VIH

2 VCC + 0.3 V

35

VIL

-0.3

0.8

V

35

II

-2

2

µA 36

VOH

2.4

–

V

VOL

–

0.4

V

IOZ

-5

5

µA

4 Meg x 16 EDO DRAM

D29_2.p65 – Rev. 5/00

7

Micron Technology, Inc., reserves the right to change products or specifications without notice.

©2000, Micron Technology, Inc.

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