AS4LC4M4883C 데이터 시트보기 (PDF) - Austin Semiconductor
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AS4LC4M4883C Datasheet PDF : 20 Pages
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AUSTIN SEMICONDUCTOR, INC.
CAPACITANCE
PARAMETER
Input Capacitance: Address pins
Input Capacitance: ?R?A/S, ?C?A/S, ?W/E, ?O/E
Input/Output Capacitance: DQ
AS4LC4M4 883C
4 MEG x 4 DRAM
SYMBOL
CI1
CI2
CIO
MAX
7
7
8
UNITS
pF
pF
pF
NOTES
2
2
2
ELECTRICAL CHARACTERISTICS AND RECOMMENDED AC OPERATING CONDITIONS
(Notes: 6, 7, 8, 9, 10, 11, 12, 13) (VCC = +3.3V ±0.3V)
AC CHARACTERISTICS
PARAMETER
Access time from column-address
Column-address set-up to ?C?A/S precharge during write
Column-address hold time (referenced to ?R?A/S)
Column-address setup time
Row-address setup time
Column-address to ?W/E delay time
Access time from ?C?A/S
Column-address hold time
?C?A/S pulse width
?C?A/S hold time (CBR REFRESH)
?C?A/S to output in Low-Z
Data output hold after next ?C?A/S LOW
?C?A/S precharge time
Access time from ?C?A/S precharge
?C?A/S to ?R?A/S precharge time
?C?A/S hold time
?C?A/S setup time (CBR REFRESH)
?C?A/S to ?W/E delay time
Write command to ?C?A/S lead time
Data-in hold time
Data-in hold time (referenced to ?R?A/S)
Data-in setup time
Output disable
Output Enable
O? E/ hold time from W? E/ during READ-MODIFY-WRITE cycle
?O/E HIGH hold from ?C?A/S HIGH
?O/E HIGH pulse width
?O/E LOW to ?C?A/S HIGH setup time
SYM
tAA
tACH
tAR
tASC
tASR
tAWD
tCAC
tCAH
tCAS
tCHR
tCLZ
tCOH
tCP
tCPA
tCRP
tCSH
tCSR
tCWD
tCWL
tDH
tDHR
tDS
tOD
tOE
tOEH
tOEHC
tOEP
tOES
-6
MIN MAX
30
15
45
0
0
55
15
10
12 10,000
10
0
5
10
35
5
50
5
35
15
10
40
0
0 15
15
10
10
10
5
-7
MIN MAX
35
15
55
0
0
65
20
15
15 10,000
15
0
5
10
40
5
55
5
40
15
12
56
0
0
15
20
12
10
10
5
-8
MIN MAX
40
20
60
0
0
65
20
15
20 10,000
15
0
5
10
40
5
60
10
45
20
15
55
0
20
20
15
10
10
5
UNITS
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
NOTES
20
14
5
15
5
20
21
21
22
AS4LC4M4
Rev. 11/97
DS000022
2-78
Austin Semiconductor, Inc., reserves the right to change products or specifications without notice.
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