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FDC5614P

60V P-Channel Logic Level PowerTrench MOSFET

Fairchild Semiconductor 

February 2002

FDC5614P

60V P-Channel Logic Level PowerTrench MOSFET

General Description

This 60V P-Channel MOSFET uses Fairchild’s high

voltage PowerTrench process. It has been optimized for

power management applications.

Applications

• DC-DC converters

• Load switch

• Power management

Features

• –3 A, –60 V.

RDS(ON) = 0.105 Ω @ VGS = –10 V

RDS(ON) = 0.135 Ω @ VGS = –4.5 V

• Fast switching speed

• High performance trench technology for extremely

low RDS(ON)

S

D

D

SuperSOT TM-6

G

DD

1

6

2

5

3

4

Absolute Maximum Ratings TA=25oC unless otherwise noted

Symbol

VDSS

VGSS

ID

Parameter

Drain-Source Voltage

Gate-Source Voltage

Drain Current – Continuous

– Pulsed

(Note 1a)

PD

Maximum Power Dissipation

(Note 1a)

(Note 1b)

TJ, TSTG

Operating and Storage Junction Temperature Range

Thermal Characteristics

RθJA

Thermal Resistance, Junction-to-Ambient

RθJC

Thermal Resistance, Junction-to-Case

(Note 1a)

(Note 1)

Package Marking and Ordering Information

Device Marking

Device

Reel Size

.564

FDC5614P

7’’

Ratings

–60

±20

–3

–20

1.6

0.8

–55 to +150

78

30

Tape width

8mm

Units

V

V

A

W

°C

°C/W

°C/W

Quantity

3000 units

2002 Fairchild Semiconductor Corporation

FDC5614P Rev C1 (W)

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