FDC5614P 데이터 시트보기 (PDF) - Fairchild Semiconductor
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FDC5614P Datasheet PDF : 5 Pages
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Typical Characteristics
15
VGS = -10V
-6.0V
12
-5.0V
9
-4.5V
-4.0V
-3.5V
6
-3.0V
3
-2.5V
0
0
1
2
3
4
5
-VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 1. On-Region Characteristics.
1.8
1.6
ID = -3.0A
VGS = -10V
1.4
1.2
1
0.8
0.6
0.4
-50 -25
0
25
50
75 100 125 150
TJ, JUNCTION TEMPERATURE (oC)
Figure 3. On-Resistance Variation with
Temperature.
15
VDS = -5V
12
9
TA = -55oC
25oC
125oC
6
3
0
1
2
3
4
5
-VGS, GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics.
1.8
1.6
1.4
1.2
1
0.8
0
VGS = -3.5V
-4.0V
-4.5V
-5.0V
-6.0V
-7.0V -8.0V
-10V
2
4
6
8
10
-ID, DRAIN CURRENT (A)
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
0.4
0.3
TA = 125oC
0.2
ID = -1.5A
0.1
TA = 25oC
0
2
4
6
8
10
-VGS, GATE TO SOURCE VOLTAGE (V)
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
100
VGS = 0V
10
1
0.1
TA = 125oC
25oC
-55oC
0.01
0.001
0
0.2
0.4
0.6
0.8
1
1.2
1.4
-VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
FDC5614P Rev C1 (W)
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