FDC6420C 데이터 시트보기 (PDF) - Fairchild Semiconductor

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FDC6420C

20V N & P-Channel PowerTrench® MOSFETs

Fairchild Semiconductor 

Electrical Characteristics

Symbol

Parameter

TA = 25°C unless otherwise noted

Test Conditions

Min Typ Max Units

Drain–Source Diode Characteristics and Maximum Ratings

IS

Maximum Continuous Drain–Source Diode Forward Current

Q1

Q2

VSD

Drain–Source Diode Forward Q1 VGS = 0 V, IS = 0.8 A (Note 2)

Voltage

Q2 VGS = 0 V, IS = 0.8 A

(Note 2)

0.8

A

–0.8

0.7 1.2

V

–0.8 –1.2

Notes:

1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of

the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design.

a) 130 °C/W when

mounted on a 0.125

in2 pad of 2 oz.

copper.

b) 140 °C/W when

mounted on a .004 in2

pad of 2 oz copper

c) 180 C°/W when mounted on a

minimum pad.

Scale 1 : 1 on letter size paper

2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%

FDC6420C Rev C(W)

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