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FDC6420C 데이터 시트보기 (PDF) - Fairchild Semiconductor

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FDC6420C
Fairchild
Fairchild Semiconductor Fairchild
FDC6420C Datasheet PDF : 8 Pages
1 2 3 4 5 6 7 8
Typical Characteristics
5
ID = -2.2A
4
3
2
1
0
0
1
VDS =- 5V
-10V
-15V
2
3
4
5
Qg, GATE CHARGE (nC)
Figure 17. Gate Charge Characteristics.
10
RDS(ON) LIMIT
1
10ms
100ms
1s
10s
DC
0.1
VGS = -4.5V
SINGLE PULSE
RθJA = 180oC/W
TA = 25oC
0.01
0.1
1
10
100
-VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 19. Maximum Safe Operating Area.
600
500
400
300
200
100
0
0
f = 1MHz
VGS = 0 V
CISS
COSS
CRSS
5
10
15
20
-VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 18. Capacitance Characteristics.
5
SINGLE PULSE
4
RθJA = 180°C/W
TA = 25°C
3
2
1
0
0.1
1
10
100
t1, TIME (sec)
1000
Figure 20. Single Pulse Maximum
Power Dissipation.
1
0.1
0.01
D = 0.5
0.2
0.1
0.05
0.02
0.01
SINGLE PULSE
RθJA(t) = r(t) * RθJA
RθJA = 180°C/W
P(pk)
t1
t2
TJ - TA = P * RθJA(t)
Duty Cycle, D = t1 / t2
0.001
0.0001
0.001
0.01
0.1
1
t1, TIME (sec)
10
100
1000
Figure 21. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1c.
Transient thermal response will change depending on the circuit board design.
FDC6420C Rev C(W)

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