FDC653N 데이터 시트보기 (PDF) - Fairchild Semiconductor
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FDC653N Datasheet PDF : 4 Pages
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Typical Electrical And Thermal Characteristics
10
ID = 5.0A
8
6
V DS = 5V
10V
15V
4
2
0
0
2
4
6
8
10
12
14
Qg , GATE CHARGE (nC)
Figure 7. Gate Charge Characteristics.
1000
500
Ciss
Coss
200
100
f = 1 MHz
Crss
VGS = 0V
50
0.1
0.3
1
3
10
30
VDS , DRAIN TO SOURCE VOLTAGE (V)
Figure 8. Capacitance Characteristics.
30
10
RDS(ON) LIMIT
3
1
0.3
VGS = 10V
0.1 SINGLE PULSE
RθJA = See Note 1b
0.03
TA = 25°C
100us
1ms
10ms
100ms
1s
DC
0.01
0.1 0.2
0.5 1
2
5
10
VDS , DRAIN-SOURCE VOLTAGE (V)
30 50
5
4
SINGLE PULSE
RθJA =See note 1b
TA = 25°C
3
2
1
0
0.01
0.1
1
10
SINGLE PULSE TIME (SEC)
100 300
Figure 9. Maximum Safe Operating Area.
Figure 10. Single Pulse Maximum Power
Dissipation.
1
0.5
D = 0.5
0.2
0.1
0.05
0.02
0.2
0.1
0.05
0.02
0.01
Single Pulse
0.01
0.0001
0.001
0.01
0.1
1
t 1, TIME (sec)
RθJA (t) = r(t) * R θJA
R θJA = See Note 1b
P(pk)
t1 t 2
TJ - TA = P * R θJA(t)
Duty Cycle, D = t 1/ t 2
10
100
300
Figure 11. Transient Thermal Response Curve.
Note: Thermal characterization performed using the conditions described in note 1b.Transient thermal
response will change depending on the circuit board design.
FDC653N Rev.B
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