FDC6327 데이터 시트보기 (PDF) - Fairchild Semiconductor

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FDC6327

Dual N & P-Channel 2.5V Specified PowerTrench MOSFET

Fairchild Semiconductor 

July 2000

FDC6327C

Dual N & P-Channel 2.5V Specified PowerTrenchTM MOSFET

General Description

These N & P-Channel 2.5V specified MOSFETs are

produced using Fairchild Semiconductor's advanced

PowerTrench process that has been especially tailored

to minimize on-state resistance and yet maintain low gate

charge for superior switching performance.

These devices have been designed to offer exceptional power

dissipation in a very small footprint for applications where

the bigger more expensive SO-8 and TSSOP-8 packages

are impractical.

Applications

• DC/DC converter

• Load switch

• Motor driving

Features

• N-Channel 2.7A, 20V. RDS(on) = 0.08Ω @ VGS = 4.5V

RDS(on) = 0.12Ω @ VGS = 2.5V

• P-Channel -1.6A, -20V.RDS(on) = 0.17Ω @ VGS = -4.5V

RDS(on)= 0.25Ω @ VGS = -2.5V

• Fast switching speed.

• Low gate charge.

• High performance trench technology for extremely

low RDS(ON).

• SuperSOTTM-6 package: small footprint (72% smaller

than SO-8); low profile (1mm thick).

D2

S1

D1

SuperSOT TM -6

G2

S2

G1

4

3

5

2

6

1

Absolute Maximum Ratings TA = 25°C unless otherwise noted

Symbol

Parameter

VDSS

VGSS

ID

Drain-Source Voltage

Gate-Source Voltage

Drain Current - Continuous

- Pulsed

(Note 1a)

PD

Power Dissipation

(Note 1a)

(Note 1b)

(Note 1c)

TJ, Tstg

Operating and Storage Junction Temperature Range

Thermal Characteristics

RθJA

Thermal Resistance, Junction-to-Ambient

RθJC

Thermal Resistance, Junction-to-Case

(Note 1a)

(Note 1)

N-Channel P-Channel

20

-20

±8

±8

2.7

-1.9

8

-8

0.96

0.9

0.7

-55 to +150

130

60

Units

V

V

A

W

°C

°C/W

°C/W

Package Marking and Ordering Information

Device Marking

Device

Reel Size

.327

FDC6327C

7”

Tape Width

8mm

Quantity

3000

1999 Fairchild Semiconductor Corporation

FDC6327C, Rev. E

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