FDC6327 데이터 시트보기 (PDF) - Fairchild Semiconductor
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FDC6327 Datasheet PDF : 9 Pages
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Electrical Characteristics
Symbol
Parameter
TA = 25°C unless otherwise noted
Test Conditions
Type Min Typ Max Units
Off Characteristics
BVDSS
∆BVDSS
∆TJ
IDSS
IGSSF
Drain-Source Breakdown
Voltage
Breakdown Voltage
Temperature Coefficient
Zero Gate Voltage Drain
Current
Gate-Body Leakage, Forward
VGS = 0 V, ID = 250 µA
VGS = 0 V, ID = - 250 µA
ID = 250 µA, Referenced to 25°C
ID = - 250 µA, Referenced to 25°C
VDS = 16 V, VGS = 0 V
VDS = -16 V, VGS = 0 V
VGS = 8 V, VDS = 0 V
IGSSR
Gate-Body Leakage, Reverse VGS = -8 V, VDS = 0 V
N-Ch 20
P-Ch -20
N-Ch
P-Ch
N-Ch
P-Ch
All
All
V
12
mV/°C
-19
1
µA
-1
100 nA
-100 nA
On Characteristics (Note 2)
VGS(th)
Gate Threshold Voltage
∆VGS(th)
∆TJ
RDS(on)
Gate Threshold Voltage
Temperature Coefficient
Static Drain-Source
On-Resistance
ID(on)
On-State Drain Current
gFS
Forward Transconductance
VDS = VGS, ID = 250 µA
N-Ch 0.4 0.9 1.5 V
VDS = VGS, ID = -250 µA
P-Ch -0.4 -0.9 -1.5
ID = 250 µA, Referenced to 25°C
N-Ch
-2.1
mV/°C
ID = - 250 µA, Referenced to 25°C P-Ch
2.3
VGS = 4.5 V, ID = 2.7 A
N-Ch
0.069 0.08 Ω
VGS = 4.5 V, ID = 2.7 A, TJ = 125°C
VGS = 2.5 V, ID = 2.2 A
VGS = -4.5 V, ID = -1.6 A
VGS = -4.5 V, ID = -1.6 A, TJ = 125°C
VGS = -2.5 V, ID = -1.3 A
N-Ch
N-Ch
P-Ch
P-Ch
P-Ch
0.094 0.13
0.093 0.12
0.141 0.17
0.203 0.27
0.205 0.25
VGS = 4.5 V, VDS = 5 V
N-Ch 8
A
VGS = -4.5 V, VDS = -5 V
P-Ch -8
VDS = 5 V, ID = 2.7 A
N-Ch
7.7
S
VDS = -5 V, ID = -1.9 A
P-Ch
4.5
Dynamic Characteristics
Ciss
Input Capacitance
N-Channel
N-Ch
325
pF
VDS = 10 V, VGS = 0 V, f = 1.0 MHz P-Ch
315
Coss
Output Capacitance
P-Channel
N-Ch
75
pF
P-Ch
65
Crss
Reverse Transfer Capacitance VDS = 10 V, VGS = 0 V, f = 1.0 MHz N-Ch
35
pF
P-Ch
24
FDC6327C, Rev. E
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