FDD6670 데이터 시트보기 (PDF) - Fairchild Semiconductor
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FDD6670 Datasheet PDF : 6 Pages
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Typical Characteristics
10
ID = 66A
8
6
4
VDS = 10V
20V
15V
2
0
0
5
10
15
20
25
30
35
Qg, GATE CHARGE (nC)
Figure 7. Gate Charge Characteristics
1000
100
RDS(ON) LIMIT
10
1
100µs
1ms
10ms
100ms
1s
10s
DC
VGS = 10V
SINGLE PULSE
0.1
RθJA = 96oC/W
TA = 25oC
0.01
0.01
0.1
1
10
100
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 9. Maximum Safe Operating Area
2400
2000
f = 1MHz
VGS = 0 V
1600
Ciss
1200
800
Coss
400
C rss
0
0
5
10
15
20
25
30
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 8. Capacitance Characteristics
100
SINGLE PULSE
RθJA = 96°C/W
80
TA = 25°C
60
40
20
0
0.01
0.1
1
10
t1, TIME (sec)
100
1000
Figure 10. Single Pulse Maximum
Power Dissipation
1
0.1
0.01
D = 0.5
0.2
0.1
0.05
0.02
0.0
SINGLE PULSE
0.001
0.001
0.01
0.1
1
t1, TIME (sec)
RθJA(t) = r(t) * RθJA
RθJA = 96 °C/W
P(pk)
t1
t2
TJ - TA = P * RθJA(t)
Duty Cycle, D = t1 / t2
10
100
1000
Figure 11. Transient Thermal Response Curve
Thermal characterization performed using the conditions described in Note 1b.
Transient thermal response will change depending on the circuit board design.
FDD6670A Rev. E1(W)
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