FDMS7660 데이터 시트보기 (PDF) - Fairchild Semiconductor
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FDMS7660 Datasheet PDF : 7 Pages
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Electrical Characteristics TJ = 25 °C unless otherwise noted
Symbol
Parameter
Test Conditions
Min Typ Max Units
Off Characteristics
BVDSS
Drain to Source Breakdown Voltage
ID = 250 µA, VGS = 0 V
30
∆BVDSS
∆TJ
Breakdown Voltage Temperature
Coefficient
ID = 250 µA, referenced to 25 °C
IDSS
Zero Gate Voltage Drain Current
VDS = 24 V, VGS = 0 V
IGSS
Gate to Source Leakage Current, Forward VGS = 20 V, VDS = 0 V
V
17
mV/°C
1
µA
100
nA
On Characteristics
VGS(th)
∆VGS(th)
∆TJ
Gate to Source Threshold Voltage
Gate to Source Threshold Voltage
Temperature Coefficient
rDS(on)
Static Drain to Source On Resistance
gFS
Forward Transconductance
VGS = VDS, ID = 250 µA
1.25 1.9
ID = 250 µA, referenced to 25 °C
-7
VGS = 10 V , ID = 25 A
1.9
VGS = 4.5 V, ID = 19 A
2.7
VGS = 10 V, ID = 25 A, TJ = 125 °C
2.5
VDS = 5 V, ID = 25 A
250
3.0
V
mV/°C
2.8
3.5
mΩ
3.7
S
Dynamic Characteristics
Ciss
Coss
Crss
Rg
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
VDS = 15 V, VGS = 0 V,
f = 1 MHz
4185 5565 pF
1380 1830 pF
125
190
pF
0.9
2.0
Ω
Switching Characteristics
td(on)
tr
td(off)
tf
Qg
Qg
Qgs
Qgd
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Total Gate Charge
Gate to Source Charge
Gate to Drain “Miller” Charge
VDD = 15 V, ID = 25A,
VGS = 10 V, RGEN = 6 Ω
VGS = 0 V to 10 V
VGS = 0 V to 4.5 V VDD = 15 V,
ID = 25 A
17
31
ns
9
18
ns
37
60
ns
7
13
ns
60
84
nC
27
38
nC
12.3
nC
7.2
nC
Drain-Source Diode Characteristics
VSD
Source to Drain Diode Forward Voltage
VGS = 0 V, IS = 2.1 A
VGS = 0 V, IS = 25 A
(Note 2)
(Note 2)
0.7
0.95
V
0.8
1.1
trr
Reverse Recovery Time
46
74
ns
Qrr
Reverse Recovery Charge
26
42
nC
ta
Reverse Recovery Fall Time
IF = 25 A, di/dt = 100 A/µs
19
nC
tb
Reverse Recovery Rise Time
27
nC
S
Softness (tb/ta)
1.4
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
IF = 25 A, di/dt = 300 A/µs
36
58
ns
43
68
nC
Notes:
1. RθJA is determined with the device mounted on a 1in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RθJC is guaranteed by design while RθCA is determined by
the user's board design.
a. 50 °C/W when mounted on a
1 in2 pad of 2 oz copper.
b. 125 °C/W when mounted on a
minimum pad of 2 oz copper.
2. Pulse Test: Pulse Width < 300 µs, Duty cycle < 2.0%.
3. EAS of 128 mJ is based on starting TJ = 25 °C, L = 1 mH, IAS = 16 A, VDD = 27 V, VGS = 10 V. 100% test at L = 0.3 mH, IAS = 23 A.
4. As an N-ch device, the negative Vgs rating is for low duty cycle pulse occurrence only. No continuous rating is implied.
©2009 Fairchild Semiconductor Corporation
FDMS7660 Rev. D
2
www.fairchildsemi.com
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