FDMS7660 데이터 시트보기 (PDF) - Fairchild Semiconductor
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FDMS7660 Datasheet PDF : 7 Pages
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Typical Characteristics TJ = 25°C unless otherwise noted
10
ID = 25 A
8
VDD = 15 V
6
VDD = 10 V
VDD = 20 V
4
2
0
0
15
30
45
60
Qg, GATE CHARGE (nC)
Figure 7. Gate Charge Characteristics
10000
1000
Ciss
Coss
100
Crss
f = 1 MHz
VGS = 0 V
10
0.1
1
10
30
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 8. Capacitance vs Drain
to Source Voltage
100
150
TJ = 25 oC
10
TJ = 100 oC
TJ = 125 oC
1
0.01
0.1
1
10
100
tAV, TIME IN AVALANCHE (ms)
Figure 9. Unclamped Inductive
Switching Capability
1000
500
100
100 us
10
1 ms
THIS AREA IS
1 LIMITED BY rDS(on)
0.1
0.01
0.01
SINGLE PULSE
TJ = MAX RATED
RθJA = 125 oC/W
TA = 25 oC
0.1
1
10 ms
100 ms
1s
10 s
DC
10
100
VDS, DRAIN to SOURCE VOLTAGE (V)
Figure 11. Forward Bias Safe
Operating Area
120
VGS = 10 V
90
VGS = 4.5 V
60
30
Limited by Package RθJC = 1.6 oC/W
0
25
50
75
100
125
150
Tc, CASE TEMPERATURE (oC)
Figure 10. Maximum Continuous Drain
Current vs Case Temperature
2000
1000
100
VGS = 10 V
SINGLE PULSE
RθJA = 125 oC/W
TA = 25 oC
10
1
0.5
10-4 10-3 10-2 10-1
1
10
t, PULSE WIDTH (sec)
100 1000
Figure 12. Single Pulse Maximum
Power Dissipation
©2009 Fairchild Semiconductor Corporation
FDMS7660 Rev. D
4
www.fairchildsemi.com
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