FDR836P 데이터 시트보기 (PDF) - Fairchild Semiconductor
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FDR836P Datasheet PDF : 8 Pages
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Typical Characteristics
20
VGS = -4.5V
-2.5V
16
-3.0V
-2.0V
12
-1.5V
8
4
0
0
0.5
1
1.5
2
2.5
3
-VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 1. On-Region Characteristics.
1.6
ID = -6.1A
1.4
VGS = -4.5V
1.2
1
0.8
0.6
-50 -25
0
25
50
75 100 125 150
TJ, JUNCTION TEMPERATURE (oC)
Figure 3. On-Resistance Variation
with Temperature.
20
VDS = -5V
16
TA = -55oC
25oC
125oC
12
8
4
0
0
0.5
1
1.5
2
2.5
-VGS, GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics.
2
1.8
1.6
VGS = -2.0V
1.4
-2.5V
1.2
-3.0V
-3.5V
-4.0V
1
-4.5V
0.8
0
4
8
12
16
20
-ID, DIRAIN CURRENT (A)
Figure 2. On-Resistance Variation
with Drain Current and Gate Voltage.
0.1
0.08
ID = -3 A
0.06
0.04
TA = 125oC
0.02
TA = 25oC
0
1
2
3
4
5
-VGS, GATE TO SOURCE VOLTAGE (V)
Figure 4. On-Resistance Variation
with Gate-to-Source Voltage.
100
VGS = 0V
10
1
0.1
0.01
TA = 125oC
25oC
-55oC
0.001
0.0001
0
0.2
0.4
0.6
0.8
1
1.2
-VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 6. Body Diode Forward Voltage
Variation with Source Current
and Temperature.
FDR836P, Rev. C
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