FDS3572 데이터 시트보기 (PDF) - Fairchild Semiconductor
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FDS3572 Datasheet PDF : 11 Pages
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Typical Characteristics TA = 25°C unless otherwise noted
50
If R = 0
tAV = (L)(IAS)/(1.3*RATED BVDSS - VDD)
If R ≠ 0
tAV = (L/R)ln[(IAS*R)/(1.3*RATED BVDSS - VDD) +1]
10
STARTING TJ = 25oC
STARTING TJ = 150oC
1
0.1
1
10
100
tAV, TIME IN AVALANCHE (ms)
NOTE: Refer to Fairchild Application Notes AN7514 and AN7515
Figure 5. Unclamped Inductive Switching
Capability
20
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
VDD = 15V
15
TJ = 150oC
10
TJ = 25oC
5
TJ = -55oC
0
3.0
3.5
4.0
4.5
5.0
5.5
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 6. Transfer Characteristics
20
VGS = 10V
15
10
20
VGS = 6V
VGS = 5V
18
VGS = 4.5V
16
VGS = 6V
5
TA = 25oC
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
0
0
0.25
0.5
0.75
1.0
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 7. Saturation Characteristics
VGS = 10V
14
12
0
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
2
4
6
8
10
ID, DRAIN CURRENT (A)
Figure 8. Drain to Source On Resistance vs Drain
Current
2.0
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
1.2
VGS = VDS, ID = 250µA
1.1
1.5
1.0
0.9
1.0
0.8
0.5
-80
VGS = 10V, ID = 8.9A
-40
0
40
80
120
160
TJ, JUNCTION TEMPERATURE (oC)
Figure 9. Normalized Drain to Source On
Resistance vs Junction Temperature
0.7
0.6
-80
-40
0
40
80
120
160
TJ, JUNCTION TEMPERATURE (oC)
Figure 10. Normalized Gate Threshold Voltage vs
Junction Temperature
©2003 Fairchild Semiconductor Corporation
FDS3572 Rev. A
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