FDS4072N7(2003) 데이터 시트보기 (PDF) - Fairchild Semiconductor

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FDS4072N7
(Rev.:2003)

40V N-Channel PowerTrench® MOSFET

Fairchild Semiconductor 

May 2003

FDS4072N7

40V N-Channel PowerTrench MOSFET

General Description

This N-Channel MOSFET has been designed

specifically to improve the overall efficiency of DC/DC

converters using either synchronous or conventional

switching PWM controllers. It has been optimized for

“low side” synchronous rectifier operation, providing an

extremely low RDS(ON) in a small package.

Applications

• Synchronous rectifier

• DC/DC converter

Features

• 12.4 A, 40 V RDS(ON) = 11 mΩ @ VGS = 4.5 V

RDS(ON) = 9 mΩ @ VGS = 10 V

• High performance trench technology for extremely

low RDS(ON)

• High power and current handling capability

• Fast switching

• FLMP SO-8 package: Enhanced thermal

performance in industry-standard package size

Bottom-side

5

Drain Contact

4

6

3

7

2

8

1

Absolute Maximum Ratings TA=25oC unless otherwise noted

Symbol

VDSS

VGSS

ID

Parameter

Drain-Source Voltage

Gate-Source Voltage

Drain Current – Continuous

– Pulsed

(Note 1a)

PD

TJ, TSTG

Power Dissipation

(Note 1a)

(Note 1b)

Operating and Storage Junction Temperature Range

Thermal Characteristics

RθJA

Thermal Resistance, Junction-to-Ambient

RθJC

Thermal Resistance, Junction-to-Case

(Note 1a)

Package Marking and Ordering Information

Device Marking

Device

Reel Size

FDS4072N7

FDS4072N7

13’’

2002 Fairchild Semiconductor Corporation

Ratings

40

± 12

12.4

60

3.0

1.5

–55 to +150

40

0.5

Units

V

V

A

W

°C

°C/W

°C/W

Tape width

12mm

Quantity

2500 units

FDS4072N7 Rev C1 (W)

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