FDS4072N7(2003) 데이터 시트보기 (PDF) - Fairchild Semiconductor
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FDS4072N7 Datasheet PDF : 7 Pages
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Typical Characteristics
10
ID = 12.4A
8
6
VDS = 10V
20V
30V
4
2
0
0
20
40
60
80
Qg, GATE CHARGE (nC)
Figure 7. Gate Charge Characteristics.
1000
100
RDS(ON) LIMIT
10
1
VGS = 4.5V
SINGLE PULSE
0.1
RθJA = 85oC/W
TA = 25oC
100µs
1ms
10ms
100ms
1s
10s
DC
0.01
0.01
0.1
1
10
100
VDS, DRAIN-SOURCE VOLTAGE (V)
6000
5000
4000
CISS
f = 1MHz
VGS = 0 V
3000
2000
1000
COSS
CRSS
0
0
10
20
30
40
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 8. Capacitance Characteristics.
50
40
30
20
10
0
0.01
0.1
SINGLE PULSE
RθJA = 85°C/W
TA = 25°C
1
10
t1, TIME (sec)
100
1000
Figure 9. Maximum Safe Operating Area.
Figure 10. Single Pulse Maximum
Power Dissipation.
1
0.1
0.01
D = 0.5
0.2
0.1
0.05
0.02
0.01
SINGLE PULSE
RθJA(t) = r(t) * RθJA
RθJA = 85 °C/W
P(pk)
t1
t2
TJ - TA = P * RθJA(t)
Duty Cycle, D = t1 / t2
0.001
0.0001
0.001
0.01
0.1
1
t1, TIME (sec)
10
100
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1b.
Transient thermal response will change depending on the circuit board design.
1000
FDS4072N7 Rev C1 (W)
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