FDS4465(2003) 데이터 시트보기 (PDF) - Fairchild Semiconductor
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FDS4465 Datasheet PDF : 5 Pages
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Typical Characteristics
50
VGS = -4.5V
40
-2.5V
-2.0V
-1.8V
30
-1.5V
20
10
0
0
0.5
1
1.5
-VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 1. On-Region Characteristics.
1.6
ID = -13.5A
VGS = -10V
1.4
1.2
1
0.8
0.6
-50 -25
0 25 50 75 100 125 150 175
TJ, JUNCTION TEMPERATURE (oC)
Figure 3. On-Resistance Variation with
Temperature.
50
VDS = -5.0V
40
30
20
TA = 125oC
25oC
10
-55oC
0
0
0.5
1
1.5
2
-VGS, GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics.
3
2.6
2.2
VGS = -1.5V
1.8
1.4
1
-1.8V
-2.0V
-2.5V
-4.5V
0.6
0
10
20
30
40
50
-ID, DRAIN CURRENT (A)
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
0.025
0.02
0.015
0.01
0.005
0
0
ID = -6.3A
TA = 25oC
TA = 125oC
1
2
3
4
5
-VGS, GATE TO SOURCE VOLTAGE (V)
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
100
10
1
0.1
0.01
VGS = 0V
TA = 125oC
25oC
-55oC
0.001
0.0001
0
0.2
0.4
0.6
0.8
1
1.2
-VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
FDS4465 Rev C1 (W)
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