FDS4559_F085 데이터 시트보기 (PDF) - Fairchild Semiconductor

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FDS4559_F085

60V Complementary PowerTrench® MOSFET

Fairchild Semiconductor 

October 2008

FDS4559_F085

tm

60V Complementary PowerTrenchMOSFET

General Description

This complementary MOSFET device is produced using

Fairchild’s advanced PowerTrench process that has

been especially tailored to minimize the on-state

resistance and yet maintain low gate charge for

superior switching performance.

Applications

• DC/DC converter

• Power management

• LCD backlight inverter

Features

• Q1: N-Channel

4.5 A, 60 V RDS(on) = 55 mΩ @ VGS = 10V

RDS(on) = 75 mΩ @ VGS = 4.5V

• Q2: P-Channel

–3.5 A, –60 V RDS(on) = 105 mΩ @ VGS = –10V

RDS(on) = 135 mΩ @ VGS = –4.5V

• Qualified to AEC Q101

• RoHS Compliant

DD2

DD2

DD1

DD1

SO-8

Pin 1 SO-8

G2

S2 G

G1 S

S1 S

S

Absolute Maximum Ratings TA = 25°C unless otherwise noted

Symbol

Parameter

VDSS

VGSS

ID

PD

TJ, TSTG

Drain-Source Voltage

Gate-Source Voltage

Drain Current - Continuous

- Pulsed

(Note 1a)

Power Dissipation for Dual Operation

Power Dissipation for Single Operation

(Note 1a)

(Note 1b)

(Note 1c)

Operating and Storage Junction Temperature Range

Thermal Characteristics

RθJA

Thermal Resistance, Junction-to-Ambient

RθJC

Thermal Resistance, Junction-to-Case

(Note 1a)

(Note 1)

Package Marking and Ordering Information

Device Marking

Device

Reel Size

FDS4559

FDS4559_ F085

13”

Q2

5

4

6

3

Q1

7

2

8

1

Q1

Q2

60

–60

±20

±20

4.5

–3.5

20

–20

2

1.6

1.2

2

-55 to +150

78

40

Units

V

V

A

W

°C

°C/W

°C/W

Tape width

12mm

Quantity

2500 units

2008 Fairchild Semiconductor Corporation

FDS4559_F085 Rev A (W)

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