FDS4935BZ 데이터 시트보기 (PDF) - Fairchild Semiconductor
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FDS4935BZ Datasheet PDF : 5 Pages
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Typical Characteristics
50
VGS = -10V
40
-6.0V
30
-5.0V
-4.5V
-4.0V
20
10
0
0
-3.5V
-3.0V
1
2
3
4
-VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 1. On-Region Characteristics.
3
VGS = -3.5V
2.6
2.2
-4.0V
1.8
-4.5V
-5.0V
1.4
-6.0V
-8.0V
1
-10V
0.6
0
10
20
30
40
50
-ID, DRAIN CURRENT (A)
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
1.6
ID = -8.8A
VGS = -10V
1.4
1.2
1
0.8
0.08
0.06
0.04
TA = 25oC
0.02
TA = 125oC
ID = -4.4A
0.6
-50
-25
0
TJ,
25
JUNCTION
50
75
TEMPERATURE
(1o0C0)
125
150
Figure 3. On-Resistance Variation with
Temperature.
0
2
4
6
8
10
-VGS, GATE TO SOURCE VOLTAGE (V)
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
50
VDS = -5V
40
30
20
TA = 125oC
-55oC
10
25oC
0
2
2.5
3
3.5
4
4.5
5
-VGS, GATE TO SOURCE VOLTAGE (V)
100
VGS = 0V
10
TA = 125oC
1
0.1
25oC
-55oC
0.01
0.001
0
0.4
0.8
1.2
1.6
-VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 5. Transfer Characteristics.
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
FDS4935BZ Rev B1 (W)
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