DatasheetQ Logo
Electronic component search and free download site. Transistors,MosFET ,Diode,Integrated circuits

FDS5672 데이터 시트보기 (PDF) - Fairchild Semiconductor

부품명
상세내역
제조사
FDS5672
Fairchild
Fairchild Semiconductor Fairchild
FDS5672 Datasheet PDF : 12 Pages
1 2 3 4 5 6 7 8 9 10 Next Last
MOSFET Maximum Ratings TC = 25°C unless otherwise noted
Symbol
VDSS
VGS
ID
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Continuous (TC = 25 oC, VGS = 10V, RθJA = 50oC/W)
Continuous (TC = 25 oC, VGS = 6V, RθJA = 50oC/W)
Pulsed
EAS
Single Pulse Avalanche Energy (Note 1)
Power dissipation
PD
Derate above 25oC
TJ, TSTG Operating and Storage Temperature
Thermal Characteristics
RθJC
RθJA
RθJA
Thermal Resistance Junction to Case (Note 2)
Thermal Resistance Junction to Ambient at 10 seconds (Note 3)
Thermal Resistance Junction to Ambient at 1000 seconds (Note 3)
Package Marking and Ordering Information
Device Marking
FDS5672
Device
FDS5672
Package
SO-8
Reel Size
330mm
Ratings
60
±20
12
10
Figure 4
245
2.5
20
-55 to 150
25
50
85
Units
V
V
A
A
mJ
W
mW/oC
oC
oC/W
oC/W
oC/W
Tape Width
12mm
Quantity
2500 units
Electrical Characteristics TC = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min Typ Max Units
Off Characteristics
BVDSS
Drain to Source Breakdown Voltage
IDSS
Zero Gate Voltage Drain Current
IGSS
Gate to Source Leakage Current
ID = 250µA, VGS = 0V
60
VDS = 50V
VGS = 0V
-
TC = 150oC -
VGS = ±20V
-
-
-
V
-
1
µA
-
250
-
±100 nA
On Characteristics
VGS(TH)
Gate to Source Threshold Voltage
rDS(ON)
Drain to Source On Resistance
VGS = VDS, ID = 250µA
ID = 12A, VGS = 10V
ID = 10A, VGS = 6V,
ID = 12A, VGS = 10V,
TC = 150oC
2
-
4
V
- 0.0088 0.010
-
0.012 0.014
-
0.016 0.023
Dynamic Characteristics
CISS
COSS
CRSS
RG
Qg(TOT)
Qg(TH)
Qgs
Qgs2
Qgd
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge at 10V
Threshold Gate Charge
Gate to Source Gate Charge
Gate Charge Threshold to Plateau
Gate to Drain “Miller” Charge
VDS = 25V, VGS = 0V,
f = 1MHz
-
2200
-
pF
-
410
-
pF
-
130
-
pF
VGS = 0.5V, f = 1MHz
-
VGS = 0V to 10V
-
VGS = 0V to 2V VDD = 30V
-
ID = 12A
-
Ig = 1.0mA
-
1.4
-
34
45
nC
4.2
5.5
nC
9.4
-
nC
5.2
-
nC
-
9.3
-
nC
©2005 Fairchild Semiconductor Corporation
2
FDS5672 Rev. A
www.fairchildsemi.com

Share Link: 

datasheetq.com  [ Privacy Policy ]Request Datasheet ] [ Contact Us ]