FDS6630 데이터 시트보기 (PDF) - Fairchild Semiconductor
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FDS6630 Datasheet PDF : 8 Pages
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Typical Characteristics (continued)
10
ID = 6 .5 A
8
6
VD S= 5 V
15V 10V
4
2
0
0
2
4
6
8
10
Qg , GATE CHARGE (nC)
Figure 7. Gate-Charge Characteristics.
100
10
R DS(ON) LIMIT
1
VGS= 1 0V
0. 1
SINGL E PU LSE
10 0us
1ms
1 0ms
10 0ms
1s
D1C0s
RθJ A=125 °C/W
TA= 25°C
0. 01
0. 1
0. 3
1
3
10
30 50
VDS , DRAIN-SO URCE VOLTAGE (V)
Figure 9. Maximum Safe Operating Area.
1000
500
C iss
200
100
50
f = 1 MHz
V GS = 0 V
Coss
C rss
0.1 0.2
0.5
1
2
5
10
30
V DS, DRAIN TO SOURCE VOLTAGE (V)
Figure 8. Capacitance Characteristics.
50
SINGLE PULSE
40
RθJA = 125oC/W
TA = 25oC
30
20
10
0
0.001
0.01
0.1
1
10
100
1000
SINGLE PULSE TIME (SEC)
Figure 10. Single Pulse Maximum
Power Dissipation.
1
0.5
0.2
0.1
0.05
0.02
0.01
0 .0 0 5
D = 0.5
0.2
0.1
0 0. 5
0 0. 2
0.0 1
S i n g le P ul se
0 .0 0 2
0 .0 0 1
0 .00 0 1
0 .0 0 1
0.01
0.1
1
t 1, TIME (s e c )
R θJ A (t) = r(t) * R θJ A
R θJ A= 125°C /W
P(p k )
t1
t2
TJ - TA = P * RθJA ( t)
D u t y C y c l e, D = t 1 /t2
10
100
300
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1c.
Transient themal response will change depending on the circuit board design.
FDS6630A Rev. C1
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