FDS6675BZ 데이터 시트보기 (PDF) - Fairchild Semiconductor
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FDS6675BZ Datasheet PDF : 6 Pages
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Typical Characteristics TJ = 25°C unless otherwise noted
10
4000
8
6
VDD = -10V
VDD = -15V
1000
Ciss
Coss
4
VDD = -20V
2
0
0
10
20
30
40
50
Qg, GATE CHARGE(nC)
Figure 7. Gate Charge Characteristics
Crss
f = 1MHz
V = 0V
GS
100
0.1
1
10
30
-VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 8. Capacitance vs Drain to Source Voltage
1000
100
10
1
0.1
0.01
1E-3
1E-4
0
TJ = 150oC
TJ = 25oC
5 10 15 20 25 30 35
-VGS(V)
Figure 9. Ig vs VGS
20
10
TJ = 25oC
TJ = 125oC
1
10-2
10-1
100
101
102
tAV, TIME IN AVALANCHE(ms)
Figure 10. Unclamped Inductive Switching
Capability
12
10
8
VGS = -10V
6
VGS = -4.5V
4
2
0
25
50
75
100
125
150
TA, AMBIENT TEMPERATURE(oC)
Figure 11. Maximum Continuous Drain Current vs
Ambient Temperature
70
10
1 ms
1
0.1
0.01
0.01
THIS AREA IS
LIMITED BY rDS(on)
SINGLE PULSE
TJ = MAX RATED
RθJA = 125 oC/W
TA = 25 oC
10 ms
100 ms
1s
10 s
DC
0.1
1
10
-VDS, DRAIN to SOURCE VOLTAGE (V)
100 200
Figure 12. Forward Bias Safe Operating Area
FDS6675BZ Rev. B1
4
www.fairchildsemi.com
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