FDS6680AS(2008) 데이터 시트보기 (PDF) - Fairchild Semiconductor

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FDS6680AS
(Rev.:2008)

30V N-Channel PowerTrench® SyncFET™

Fairchild Semiconductor 

May 2008

FDS6680AS

tm

30V N-Channel PowerTrench® SyncFET™

General Description

Features

The FDS6680AS is designed to replace a single SO-8

MOSFET and Schottky diode in synchronous DC:DC

power supplies. This 30V MOSFET is designed to

maximize power conversion efficiency, providing a low

RDS(ON) and low gate charge. The FDS6680AS

includes an integrated Schottky diode using Fairchild’s

monolithic SyncFET technology. The performance of

the FDS6680AS as the low-side switch in a

synchronous rectifier is indistinguishable from the

performance of the FDS6680 in parallel with a Schottky

diode.

Applications

• 11.5 A, 30 V. RDS(ON) max= 10.0 mΩ @ VGS = 10 V

RDS(ON) max= 12.5 mΩ @ VGS = 4.5 V

• Includes SyncFET Schottky body diode

• Low gate charge (22nC typical)

• High performance trench technology for extremely low

RDS(ON) and fast switching

• High power and current handling capability

• DC/DC converter

• Low side notebooks

D

D

D

D

SO-8

G

SS

S

Absolute Maximum Ratings TA=25oC unless otherwise noted

Symbol

VDSS

VGSS

ID

PD

Parameter

Drain-Source Voltage

Gate-Source Voltage

Drain Current – Continuous

– Pulsed

Power Dissipation for Single Operation

(Note 1a)

(Note 1a)

(Note 1b)

(Note 1c)

TJ, TSTG

Operating and Storage Junction Temperature Range

Thermal Characteristics

RθJA

Thermal Resistance, Junction-to-Ambient

RθJC

Thermal Resistance, Junction-to-Case

(Note 1a)

(Note 1)

Package Marking and Ordering Information

Device Marking

Device

Reel Size

FDS6680AS

FDS6680AS

13’’

5

6

7

8

Ratings

30

±20

11.5

50

2.5

1.2

1

–55 to +150

50

25

Tape width

12mm

4

3

2

1

Units

V

V

A

W

°C

°C/W

°C/W

Quantity

2500 units

©2008 Fairchild Semiconductor Corporation

FDS6680AS Rev B2(X)

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