FDS6680AS(2008) 데이터 시트보기 (PDF) - Fairchild Semiconductor

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FDS6680AS
(Rev.:2008)

30V N-Channel PowerTrench® SyncFET™

Fairchild Semiconductor 

Electrical Characteristics

Symbol

Parameter

TA = 25°C unless otherwise noted

Test Conditions

Min Typ Max Unit

Drain–Source Diode Characteristics and Maximum Ratings

IS

Maximum Continuous Drain–Source Diode Forward Current

VSD

Drain–Source Diode Forward

Voltage

Trr

Diode Reverse Recovery Time

VGS = 0 V,

VGS = 0 V,

IF = 11.5A,

IS = 3.5 A

IS = 7 A

(Note 2)

(Note 2)

Qrr

Diode Reverse Recovery Charge

diF/dt = 300 A/µs

(Note 3)

3.5

A

0.5

0.7

V

0.6

18

nS

12

nC

Notes:

1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the

drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design.

a) 50°/W when

mounted on a 1 in2

pad of 2 oz copper

b) 105°/W when

mounted on a .04 in2

pad of 2 oz copper

c) 125°/W when mounted on a

minimum pad.

Scale 1 : 1 on letter size paper

2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%

3. See “SyncFET Schottky body diode characteristics” below.

FDS6680AS Rev B2(X)

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