FDS6699S 데이터 시트보기 (PDF) - Fairchild Semiconductor
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FDS6699S Datasheet PDF : 6 Pages
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Typical Characteristics
105
87.5
VGS = 10V
4.5V
70
3.5V
3.0V
52.5
35
17.5
2.5V
0
0
0.5
1
1.5
2
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 1. On-Region Characteristics.
1.6
ID = 21A
VGS =10V
1.4
1.2
1
0.8
0.6
-50
-25
0
25
50
75
100
125
TJ, JUNCTION TEMPERATURE (°C)
Figure 3. On-Resistance Variation with
Temperature.
105
87.5
VDS = 5V
70
52.5
35
TA = 125°C
-55°C
17.5
0
1
25°C
1.5
2
2.5
3
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics.
2.6
2.4
2.2
2
1.8
1.6
1.4
1.2
1
0.8
0
VGS = 2.5V
3.0V
3.5V
4.0V
4.5V
6.0V
10V
17.5
35
52.5
70
87.5
105
ID, DRAIN CURRENT (A)
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
0.012
0.01
ID = 10.5A
0.008
0.006
TA = 125°C
0.004
TA = 25°C
0.002
2
4
6
8
10
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
1000
100
VGS = 0V
10
1
0.1
0.01
TA = 125°C
25°C
-55°C
0.001
0
0.2
0.4
0.6
0.8
VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
FDS6699S Rev. D
3
www.fairchildsemi.com
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