FDS6670AS 데이터 시트보기 (PDF) - Fairchild Semiconductor
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FDS6670AS Datasheet PDF : 7 Pages
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Electrical Characteristics
Symbol
Parameter
TA = 25°C unless otherwise noted
Test Conditions
Off Characteristics
BVDSS
∆BVDSS
∆TJ
IDSS
Drain–Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
IGSS
Gate–Body Leakage
On Characteristics (Note 2)
VGS(th)
Gate Threshold Voltage
∆VGS(th)
∆TJ
RDS(on)
Gate Threshold Voltage
Temperature Coefficient
Static Drain–Source
On–Resistance
ID(on)
On–State Drain Current
gFS
Forward Transconductance
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Gate Resistance
Switching Characteristics (Note 2)
td(on)
Turn–On Delay Time
tr
Turn–On Rise Time
td(off)
Turn–Off Delay Time
tf
Turn–Off Fall Time
td(on)
Turn–On Delay Time
tr
Turn–On Rise Time
td(off)
Turn–Off Delay Time
tf
Turn–Off Fall Time
Qg(TOT)
Total Gate Charge at Vgs=10V
Qg
Total Gate Charge at Vgs=5V
Qgs
Gate–Source Charge
Qgd
Gate–Drain Charge
VGS = 0 V, ID = 1 mA
ID = 1 mA, Referenced to 25°C
VDS = 24 V, VGS = 0 V
VGS = ±20 V, VDS = 0 V
VDS = VGS, ID = 1 mA
ID = 1 mA, Referenced to 25°C
VGS = 10 V,
ID = 13.5 A
VGS = 4.5 V, ID = 11.2 A
VGS=10 V, ID =13.5A, TJ=125°C
VGS = 10 V,
VDS = 5 V
VDS = 10 V,
ID = 13.5 A
VDS = 15 V,
f = 1.0 MHz
V GS = 0 V,
VGS = 15 mV, f = 1.0 MHz
VDS = 15 V,
VGS = 10 V,
ID = 1 A,
RGEN = 6 Ω
VDS = 15 V,
VGS = 4.5 V,
ID = 1 A,
RGEN = 6 Ω
VDD = 15 V, ID = 13.5 A,
Min
30
1
50
Typ Max Units
V
31
mV/°C
500 µA
±100 nA
1.7
3
V
–3.3
mV/°C
7.5
9
mΩ
9 11.5
10 12.5
A
66
S
1540
pF
440
pF
160
pF
2.1
10 20
ns
5
10
ns
27 44
ns
18
32
ns
13 23
ns
15
27
ns
24 38
ns
13
23
ns
27
38
nC
16
22
nC
4.2
nC
5.1
nC
FDS6670AS Rev A (X)
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