FDS6984AS_NL 데이터 시트보기 (PDF) - Fairchild Semiconductor

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FDS6984AS_NL

Dual Notebook Power Supply N-Channel PowerTrench® SyncFET™

Fairchild Semiconductor 

Typical Characteristics (continued)

SyncFET Schottky Body Diode

Characteristics

Fairchild’s SyncFET process embeds a Schottky diode

in parallel with PowerTrench MOSFET. This diode

exhibits similar characteristics to a discrete external

Schottky diode in parallel with a MOSFET. Figure 22

shows the reverse recovery characteristic of the

FDS6984AS.

10nS/DIV

Figure 22. FDS6984AS SyncFET body

diode reverse recovery characteristic.

For comparison purposes, Figure 23 shows the reverse

recovery characteristics of the body diode of an

equivalent size MOSFET produced without SyncFET

(FDS6984A).

Schottky barrier diodes exhibit significant leakage at

high temperature and high reverse voltage. This will

increase the power in the device.

0.01

0.001

0.0001

125oC

100oC

0.00001

25oC

0.000001

0

10

20

30

VDS, REVERSE VOLTAGE (V)

Figure 24. SyncFET body diode reverse

leakage versus drain-source voltage and

temperature.

0V

10nS/DIV

Figure 23. Non-SyncFET (FDS6984A) body

diode reverse recovery characteristic.

FDS6984AS Rev A (X)

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