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FDS6990AS_NL

Dual 30V N-Channel PowerTrench® SyncFET™

Fairchild Semiconductor 

FDS6990AS

Dual 30V N-Channel PowerTrench® SyncFET™

M

May 2008

Features

■ 7.5 A, 30 V. RDS(ON) = 22 mΩ @ VGS = 10 V

RDS(ON) = 28 mΩ @ VGS = 4.5 V

■ Includes SyncFET Schottky diode

■ Low gate charge (10nC typical)

■ High performance trench technology for extremely low

RDS(ON)

■ High power and current handling capability

Applications

■ DC/DC converter

■ Motor drives

General Description

The FDS6990AS is designed to replace a dual SO-8 MOSFET

and two Schottky diodes in synchronous DC:DC power sup-

plies. This 30V MOSFET is designed to maximize power con-

version efficiency, providing a low RDS(ON) and low gate charge.

Each MOSFET includes integrated Schottky diodes using Fair-

child’s monolithic SyncFET technology. The performance of the

FDS6990AS as the low-side switch in a synchronous rectifier is

similar to the performance of the FDS6990A in parallel with a

Schottky diode.

D1

D1

D2

D2

SO-8

Pin 1

G1

S1

G2

S2

5

4

Q1

6

3

7

Q2

2

8

1

Absolute Maximum Ratings TA=25°C unless otherwise noted

Symbol

Parameter

VDSS

VGSS

ID

PD

Drain-Source Voltage

Gate-Source Voltage

Drain Current

– Continuous

– Pulsed

Power Dissipation for Dual Operation

Power Dissipation for Single Operation

TJ, TSTG

Operating and Storage Junction Temperature Range

Thermal Characteristics

RθJA

RθJC

Thermal Resistance, Junction-to-Ambient

Thermal Resistance, Junction-to-Case

(Note 1a)

(Note 1a)

(Note 1b)

(Note 1c)

(Note 1a)

(Note 1)

Ratings

30

±20

7.5

20

2

1.6

1

0.9

–55 to +150

78

40

Package Marking and Ordering Information

Device Marking

FDS6990AS

Device

FDS6990AS

Reel Size

13"

Tape width

12mm

Units

V

V

A

W

°C

°C/W

°C/W

Quantity

2500 units

©2008 Fairchild Semiconductor Corporation

1

FDS6990AS Rev. A1

www.fairchildsemi.com

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