FDS6994S 데이터 시트보기 (PDF) - Fairchild Semiconductor
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FDS6994S Datasheet PDF : 9 Pages
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Electrical Characteristics (continued)
TA = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Type Min Typ Max Units
Switching Characteristics (Note 2)
td(on)
Turn-On Delay Time
VDD = 15 V, ID = 1 A,
Q2
VGS = 10V, RGEN = 6 Ω
Q1
tr
Turn-On Rise Time
Q2
Q1
td(off)
Turn-Off Delay Time
Q2
Q1
tf
Turn-Off Fall Time
Q2
Q1
Qg
Total Gate Charge
Q2:
Q2
VDS = 15 V, ID = 7.9 A, VGS = 5 V
Q1
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
Q2
Q1:
Q1
VDS = 15 V, ID = 6.5 A, VGS = 5 V
Q2
Q1
Drain–Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain-Source Diode Forward Current
Q2
Q1
tRR
Reverse Recovery Time
IF = 8.2 A,
QRR
Reverse Recovery Charge diF/dt = 300 A/µs
Q2
(Note 3)
tRR
Reverse Recovery Time
IF = 6.9 A,
QRR
Reverse Recovery Charge diF/dt = 100 A/µs
Q2
(Note 3)
VSD
Drain-Source Diode Forward VGS = 0 V, IS = 2.3 A
Voltage
VGS = 0 V, IS = 1.3 A
(Note 2) Q2
(Note 2) Q1
11 20 ns
11 20
8
16 ns
7
14
50 80 ns
27 43
17 31 ns
4
8
25 35 nC
8
12
6
nC
3
7
nC
3
2.3 A
1.3
25
ns
19
nC
23
ns
10
nC
0.4
7
V
0.53 1.2
Notes:
1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design.
a) 78°C/W when
mounted on a
0.5in2 pad of 2
oz copper
b) 125°C/W when
mounted on a
0.02 in2 pad of
2 oz copper
c) 135°C/W when
mounted on a
minimum pad.
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%
3. See “SyncFET Schottky body diode characteristics” below.
FDS6994S Rev C2(W)
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