FDS8949(2006) 데이터 시트보기 (PDF) - Fairchild Semiconductor
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FDS8949 Datasheet PDF : 6 Pages
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Typical Characteristics TJ = 25°C unless otherwise noted
20
VGS = 10V
16
12
VGS = 4.5V
VGS = 3.5V
3.0
PULSE DURATION = 300µs
DUTY CYCLE = 20%MAX
2.5
VGS = 3.0V
2.0
VGS = 3.5V
8
VGS = 3.0V
4
PULSE DURATION = 300µs
DUTY CYCLE = 20%MAX
0
0.0
0.5
1.0
1.5
2.0
2.5
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 1. On Region Characteristics
1.5
VGS = 4.5V
1.0
0.5
0
4
8
12
ID, DRAIN CURRENT(A)
VGS = 10V
16
20
Figure 2. Normalized On-Resistance vs Drain
Current and Gate Voltage
1.6
ID = 6A
VGS = 10V
1.4
1.2
1.0
0.8
0.6
-50
-25 0 25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (oC)
Figure 3. Normalized On Resistance vs Junction
Temperature
70
60
ID = 3.5A
PULSE DURATION = 300µs
DUTY CYCLE = 20%MAX
50
40
TJ = 125oC
30
20
TJ = 25oC
10
2
4
6
8
10
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 4. On-Resistance vs Gate to Source
Voltage
20
PULSE DURATION = 300µs
DUTY CYCLE = 20%MAX
16
VDD = 10V
12
8
TJ = 125oC
TJ = 25oC
4
TJ = -55oC
0
1.5
2.0
2.5
3.0
3.5
4.0
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics
100
VGS = 0V
10
TJ = 125oC
1
0.1
TJ = 25oC
0.01
TJ = -55oC
1E-3
0.2
0.4
0.6
0.8
1.0
1.2
VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 6. Source to Drain Diode Forward
Voltage vs Source Current
FDS8949 Rev. B1
3
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