FDS8949(2006) 데이터 시트보기 (PDF) - Fairchild Semiconductor
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FDS8949 Datasheet PDF : 6 Pages
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Typical Characteristics TJ = 25°C unless otherwise noted
10
103
VDD = 10V
8
VDD = 20V
6
VDD = 30V
102
4
Ciss
Coss
Crss
2
0
0
4
8
12
16
Qg, GATE CHARGE(nC)
Figure 7. Gate Charge Characteristics
101
0.1
f = 1MHz
VGS = 0V
1
10
40
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 8. Capacitance vs Drain to Source Voltage
10
1
TJ = 25oC
TJ = 125oC
0.1
10-3
10-2
10-1
100
101
102
103
tAV, TIME IN AVALANCHE(ms)
Figure 9. Unclamped Inductive Switching
Capability
7
6
5
VGS = 10V
4
3
VGS = 4.5V
2
1
o
RθJA = 81 C/W
0
25
50
75
100
125
150
TA, Ambient TEMPERATURE (oC)
Figure 10. Maximum Continuous Drain Current vs
Ambient Temperature
100
10
100us
1
LIMITED BY
PACKAGE
1ms
10ms
100ms
0.1
OPERATION IN THIS
AREA MAY BE
LIMITED BY rDS(on)
0.01
0.01
0.1
SINGLE PULSE
TJ = MAX RATED
TA = 25oC
1
10
1s
10s
DC
100 300
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 11. Forward Bias Safe Operating Area
100
VGS = 10V
10
SINGLE PULSE
RθJA = 135°C/W
TA = 25°C
SINGLE PULSE
1
0.7
10-4 10-3 10-2 10-1 100 101 102 103
t, PULSE WIDTH (s)
Figure 12. Single Pulse Maximum Power
Dissipation
FDS8949 Rev. B1
4
www.fairchildsemi.com
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