FDS6299S 데이터 시트보기 (PDF) - Fairchild Semiconductor
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FDS6299S Datasheet PDF : 6 Pages
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Electrical Characteristics
Symbol
Parameter
TA = 25°C unless otherwise noted
Test Conditions
Min Typ Max Units
Off Characteristics
BVDSS
∆BVDSS
∆TJ
IDSS
Drain–Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
IGSS
Gate–Body Leakage
VGS = 0 V,
ID = 1 mA
30
ID = 10 mA, Referenced to 25°C
VDS = 24 V, VGS = 0 V
VGS = ±20 V, VDS = 0 V
V
22
mV/°C
500 µA
±100 nA
On Characteristics
VGS(th)
∆VGS(th)
∆TJ
RDS(on)
Gate Threshold Voltage
Gate Threshold Voltage
Temperature Coefficient
Static Drain–Source
On–Resistance
gFS
Forward Transconductance
VDS = VGS,
ID = 1 mA
1
ID = 10 mA, Referenced to 25°C
VGS = 10 V, ID = 21 A
VGS = 4.5 V, ID = 19 A
VGS=10 V, ID =21 A, TJ=125°C
VDS = 10 V, ID = 21 A
1.7 3
V
–5
mV/°C
3.3 3.9 mΩ
4.1 5.1
4.5 5.6
94
S
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
RG
Gate Resistance
VDS = 15 V,
f = 1.0 MHz
V GS = 0 V,
VGS = 15 mV, f = 1.0 MHz
3880
pF
1030
pF
310
pF
0.4 1.8 3.1
Ω
Switching Characteristics (Note 2)
td(on)
Turn–On Delay Time
tr
Turn–On Rise Time
td(off)
Turn–Off Delay Time
tf
Turn–Off Fall Time
Qg(TOT)
Total Gate Charge at VGS=10V
Qg
Total Gate Charge at VGS=5V
Qgs
Gate–Source Charge
Qgd
Gate–Drain Charge
VDD = 15 V,
VGS = 10 V,
ID = 1 A,
RGEN = 6 Ω
VDS = 15 V,
ID = 21 A
12 22
ns
12 22
ns
60 96
ns
35 56
ns
58 81
nC
31 43
nC
11
nC
8
nC
Drain–Source Diode Characteristics and Maximum Ratings
VSD
Drain–Source Diode Forward Voltage VGS = 0 V, IS = 3.5 A (Note 2)
420 700 mV
trr
Diode Reverse Recovery Time
IF = 21 A,
32
ns
IRM
Diode Reverse Recovery Current
dIF/dt = 300 A/µs
(Note 3)
2.1
A
Qrr
Diode Reverse Recovery Charge
34
nC
Notes:
1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design.
a) 50°/W when
mounted on a 1 in2
pad of 2 oz copper
b) 105°/W when
mounted on a .04 in2
pad of 2 oz copper
c) 125°/W when mounted on a
minimum pad.
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%.
3. See “SyncFET Schottky body diode characteristics” below.
FDS6299S Rev C1 (W)
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