FDS6299S 데이터 시트보기 (PDF) - Fairchild Semiconductor
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FDS6299S Datasheet PDF : 6 Pages
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Typical Characteristics
105
VGS = 10V
90
4.5V
75
3.5V
4.0V
60
45
3.0V
30
15
0
0
2.5V
0.5
1
1.5
2
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 1. On-Region Characteristics.
2.4
VGS = 3.0V
2.2
2
1.8
1.6
3.5V
1.4
4.0V
4.5V
1.2
5.0V
6.0V
1
10V
0.8
0
15
30
45
60
75
90
105
ID, DRAIN CURRENT (A)
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
1.6
ID = 21A
VGS =10V
1.4
1.2
1
0.8
0.6
-50
-25
0
25
50
75
100
125
TJ, JUNCTION TEMPERATURE (oC)
Figure 3. On-Resistance Variation with
Temperature.
0.012
0.01
ID = 10.5A
0.008
0.006
TA = 125oC
0.004
TA = 25oC
0.002
2
4
6
8
10
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
105
VDS = 5V
90
75
60
45
TA = 125oC
-55oC
30
15
25oC
0
1
1.5
2
2.5
3
3.5
4
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics.
100
VGS = 0V
10
TA = 125oC
1
0.1
0.01
25oC
-55oC
0.001
0
0.2
0.4
0.6
0.8
VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
FDS6299S Rev C (W)
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