FDS4885C 데이터 시트보기 (PDF) - Fairchild Semiconductor
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FDS4885C Datasheet PDF : 8 Pages
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Electrical Characteristics
Symbol
Parameter
TA = 25°C unless otherwise noted
Test Conditions
Type Min Typ Max Units
Off Characteristics
BVDSS
Drain-Source Breakdown
Voltage
∆BVDSS
∆TJ
IDSS
Breakdown Voltage
Temperature Coefficient
Zero Gate Voltage Drain
Current
IGSSF
Gate-Body Leakage, Forward
IGSSR
Gate-Body Leakage, Reverse
VGS = 0 V,
ID = 250 µA
VGS = 0 V,
ID = –250 µA
ID = 250 µA, Referenced to 25°C
ID = –250 µA, Referenced to 25°C
VDS = 32 V,
VGS = 0 V
VDS = –32 V, VGS = 0 V
VGS = 20 V,
VDS = 0 V
VGS = –20 V, VDS = 0 V
Q1 40
V
Q2 –40
Q1
40
mV/°C
Q2
–30
Q1
1
µA
Q2
–1
All
100 nA
All
–100 nA
On Characteristics (Note 2)
VGS(th)
Gate Threshold Voltage
VDS = VGS,
ID = 250 µA
Q1
VDS = VGS,
ID = –250 µA
Q2
∆VGS(th)
∆TJ
Gate Threshold Voltage
Temperature Coefficient
ID = 250 µA, Referenced to 25°C
Q1
ID = –250 µA, Referenced to 25°C
Q2
RDS(on)
Static Drain-Source
On-Resistance
VGS = 10 V,
ID = 7.5 A
Q1
VGS = 7 V,
ID = 6.5 A
VGS = 10 V, ID = 7.5 A, TJ = 125°C
VGS = –10 V,
ID = –6 A
Q2
VGS = –4.5 V, ID = –5.3 A
VGS = –10 V, ID = –6 A, TJ = 125°C
gFS
Forward Transconductance VDS = 10 V,
ID = 7.5 A
Q1
VDS = –10 V,
ID =–6 A
Q2
Dynamic Characteristics
Ciss
Input Capacitance
Q1
Q1
VDS = 20 V, VGS = 0 V, f = 1.0 MHz
Q2
Coss
Output Capacitance
Q1
Q2
Q2
Crss
Reverse Transfer Capacitance VDS = –20 V, VGS = 0 V, f = 1.0 MHz Q1
Q2
RG
Gate Resistance
VGS = 15 mV, f = 1.0 MHz
Q1
Q2
2
4
5
V
–1 –1.6 –3
–9
mV/°C
5
17 22 mΩ
27 35
26 36
26 31
34 42
37 47
14
S
19
900
pF
1560
200
pF
215
100
pF
110
2
Ω
9
FDS4885C Rev D(W)
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