FDS4885C 데이터 시트보기 (PDF) - Fairchild Semiconductor
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FDS4885C Datasheet PDF : 8 Pages
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Typical Characteristics: Q2 (P-Channel)
10
ID = -6A
8
6
VDS = -10V
-20V
-30V
4
2
0
0
5
10
15
20
25
30
Qg, GATE CHARGE (nC)
Figure 17. Gate Charge Characteristics.
100
RDS(ON) LIMIT
10
1
VGS = -10V
0.1
SINGLE PULSE
RθJA = 135oC/W
TA = 25oC
1ms
10ms
100ms
1s
10s
DC
100µ
0.01
0.1
1
10
100
-VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 19. Maximum Safe Operating Area.
2000
1600
CISS
f = 1 MHz
VGS = 0 V
1200
800
COSS
400
CRSS
0
0
5
10
15
20
25
30
35
40
-VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 18. Capacitance Characteristics.
50
SINGLE PULSE
RθJA = 135°C/W
40
TA = 25°C
30
20
10
0
0.001
0.01
0.1
1
10
t1, TIME (sec)
100
1000
Figure 20. Single Pulse Maximum
Power Dissipation.
1
0.1
0.01
D = 0.5
0.2
0.1
0.05
0.02
0.01
0.001
0.0001
SINGLE PULSE
0.001
0.01
0.1
1
t1, TIME (sec)
RθJA(t) = r(t) * RθJA
RθJA = 135oC/W
P(pk)
t1
t2
TJ - TA = P * RθJA(t)
Duty Cycle, D = t1 / t2
10
100
1000
Figure 21. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1c.
Transient thermal response will change depending on the circuit board design.
FDS4885C Rev D(W)
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