FDS4897AC 데이터 시트보기 (PDF) - Fairchild Semiconductor

부품명

상세내역

제조사

FDS4897AC

Dual N & P-Channel PowerTrench® MOSFET

Fairchild Semiconductor 

Electrical Characteristics TJ = 25 °C unless otherwise noted

Symbol

Parameter

Test Conditions

Type Min Typ Max Units

Drain-Source Diode Characteristics

VSD

Source to Drain Diode Forward Voltage

VGS = 0 V, IS = 1.3 A

VGS = 0 V, IS = -1.3 A

(Note 2) Q1

(Note 2) Q2

trr

Reverse Recovery Time

Qrr

Reverse Recovery Charge

Q1

Q1

IF = 6.1 A, di/dt = 100 A/s

Q2

Q2

Q1

IF = -5.2 A, di/dt = 100 A/s

Q2

0.75 1.2

-0.76 -1.2

V

17

20

31

36

ns

7

10

15

20

nC

Notes:

1: RθJA is determined with the device mounted on a 1in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RθJC is guaranteed by design while RθCA is determined by

the user's board design.

a) 78 °C/W when

mounted on a 1 in2

pad of 2 oz copper

b) 135 °C/W when

mounted on a

minimun pad

2: Pulse Test: Pulse Width < 300 µs, Duty cycle < 2.0%.

3: Starting TJ = 25 °C, N-ch: L = 3 mH, IAS = 5 A, VDD = 40 V, VGS = 10 V; P-ch: L = 3 mH, IAS = -7 A, VDD = -40 V, VGS = -10 V.

©2008 Fairchild Semiconductor Corporation

3

FDS4897AC Rev.C

www.fairchildsemi.com

Share Link: