FDS8670 데이터 시트보기 (PDF) - Fairchild Semiconductor
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FDS8670 Datasheet PDF : 5 Pages
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Electrical Characteristics
Symbol
Parameter
TA = 25°C unless otherwise noted
Test Conditions
Off Characteristics
BVDSS
Drain–Source Breakdown Voltage
∆BVDSS
∆TJ
Breakdown Voltage Temperature
Coefficient
IDSS
Zero Gate Voltage Drain Current
IGSS
Gate–Body Leakage
VGS = 0 V,
ID = 250 µA
ID = 250 µA, Referenced to 25°C
VDS = 24 V, VGS = 0 V
VGS = ±20 V, VDS = 0 V
On Characteristics (Note 2)
VGS(th)
Gate Threshold Voltage
∆VGS(th)
∆TJ
Gate Threshold Voltage
Temperature Coefficient
RDS(on)
Static Drain–Source
On–Resistance
gFS
Forward Transconductance
VDS = VGS,
ID = 250 µA
ID = 250 µA, Referenced to 25°C
VGS = 10 V, ID = 21 A
VGS = 4.5 V, ID = 18 A
VGS=10 V, ID =21 A, TJ=125°C
VDS = 10 V, ID = 21 A
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
RG
Gate Resistance
VDS = 15 V,
f = 1.0 MHz
V GS = 0 V,
f = 1.0 MHz
Switching Characteristics (Note 2)
td(on)
Turn–On Delay Time
tr
Turn–On Rise Time
td(off)
Turn–Off Delay Time
tf
Turn–Off Fall Time
Qg(TOT)
Total Gate Charge at VGS = 10V
Qg(TOT)
Total Gate Charge at VGS = 5V
Qgs
Gate–Source Charge
Qgd
Gate–Drain Charge
VDD = 15 V,
VGS = 10 V,
ID = 1 A,
RGEN = 6 Ω
VDD = 15 V, ID = 21 A
Drain–Source Diode Characteristics and Maximum Ratings
VSD
Drain–Source Diode Forward
VGS = 0 V, IS = 2.1 A (Note 2)
Voltage
trr
Diode Reverse Recovery Time
IF = 21 A,
IRM
Diode Reverse Recovery Current dIF/dt = 100 A/µs
Qrr
Diode Reverse Recovery Charge
Min Typ Max Units
30
39
V
mV/°C
1
µA
±100 nA
1 1.4 3
V
–5
mV/°C
3.3 3.7 mΩ
4.2 5.0
4.4 5.5
118
S
4040
pF
1730
pF
160
pF
0.2 0.9 1.5
Ω
12 21
ns
11 20
ns
56 90
ns
68 108 ns
58.5 82
nC
30 42
nC
9.5
nC
5.5
nC
0.7 1.2
V
51
ns
1.5
A
37
nC
Notes:
1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design.
a) 50°/W when
mounted on a 1 in2
pad of 2 oz copper
b) 105°/W when
mounted on a .04 in2
pad of 2 oz copper
c) 125°/W when mounted on a
minimum pad.
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%
3. Starting TJ = 25°C, L = 3mH, IAS = 17A, VDD = 30V, VGS = 10V
FDS8670 Rev D1 (W)
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